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NIS5101B1T1

Onsemi

NIS5101B1T1 by Onsemi

NIS5101B1T1 by Onsemi is a Power Management IC with 7 terminals in a small outline package. It features tin lead terminal finish, gull wing form, and 4.57mm seated height. Ideal for power supply support circuits, this IC is designed for surface mount applications in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 829 parts In-Stock

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Vyrian

USA . 276 parts In-Stock

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276

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Distributors (Availability)

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TANS Electronics

Latvia . 7,944 parts In-Stock

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7,944

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Corphita

USA . 2,481 parts In-Stock

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Problanco Electronics

Mexico . 2,169 parts In-Stock

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UHIMA Technologies

Türkiye . 892 parts In-Stock

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892

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Kulean Microsystems

USA . 766 parts In-Stock

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Corohmni

South Africa . 487 parts In-Stock

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487

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SupplyDigital Components

Austria . 222 parts In-Stock

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Overview

Discover the power of the NIS5101B1T1 by Onsemi, a cutting-edge Power Management IC designed to deliver superior performance and reliability. Onsemi, known for its high-quality products, has crafted this IC with precision and expertise. Perfect for a wide range of applications, this compact yet powerful device offers unparalleled value and benefits to customers. Experience seamless power supply support like never before with the NIS5101B1T1 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good durability and insulation properties, ensuring reliable performance and protection of the internal components.

Surface Mount: YES

Surface mount design allows for easy and efficient installation onto circuit boards, saving space and reducing assembly time.

No. of Terminals: 7

Having 7 terminals provides flexibility in connecting various external components and peripherals, enhancing the functionality and customization options of the circuit.

Terminal Finish: TIN LEAD

Tin lead finish offers good solderability and conductivity, ensuring secure and stable connections for optimal electrical performance.

Width (mm): 8.4 mm

Compact width of 8.4mm allows for space-efficient integration into tight layouts or designs, ideal for applications with limited space constraints.

Length: 10.18 mm

The length of 10.18mm strikes a balance between compact size and accessibility, making it easy to handle and install in various electronic devices or systems.

Terminal Pitch: 1.27 mm

With a terminal pitch of 1.27mm, this IC offers compatibility with standard PCB layouts and enables easy connection to other components, ensuring seamless integration.

Technical Specifications

Power Management ICs NIS5101B1T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

REQUIRES A NEGATIVE VOLTAGE OF -48V

Adjustable Threshold:

NO

JESD-30 Code:

R-PSSO-G7

JESD-609 Code:

e0

Length:

10.18 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

7

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Width (mm):

8.4 mm

Trade Compliance

NIS5101B1T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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