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NIS5102QP1HT1G

Onsemi

NIS5102QP1HT1G by Onsemi

NIS5102QP1HT1G by Onsemi is a Power Management IC with 12V nominal voltage, adjustable threshold, and small outline package. It is ideal for power supply management circuits in applications requiring a max supply voltage of 18V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,478 parts In-Stock

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Digiode

USA . 1,435 parts In-Stock

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AZTECH Wire

Italy . 577 parts In-Stock

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$20.380

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Component Stockers USA

USA . 627 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 21,191 parts In-Stock

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Kulean Microsystems

USA . 8,144 parts In-Stock

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Problanco Electronics

Mexico . 5,478 parts In-Stock

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SupplyDigital Components

Austria . 5,015 parts In-Stock

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TANS Electronics

Latvia . 4,668 parts In-Stock

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Corphita

USA . 1,473 parts In-Stock

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UHIMA Technologies

Türkiye . 566 parts In-Stock

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Vigor

Singapore . 500 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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Microchip USA

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Overview

Discover the power of reliable and high-quality Power Management ICs with the NIS5102QP1HT1G by Onsemi. Designed to meet the demands of various applications, this small outline, heat sink/slug package offers a seamless integration for your projects. With a nominal supply voltage of 12V and adjustable threshold, this power supply management circuit ensures optimal performance and efficiency. Trust Onsemi's expertise in power management ICs to deliver superior value and benefits to your designs. Elevate your projects with the NIS5102QP1HT1G today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for efficient and compact mounting on PCBs, saving space and improving overall product reliability.

Nominal Supply Voltage (Vsup): 12 V

A stable and standard supply voltage of 12V ensures compatibility with a wide range of applications and devices.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG

The small outline package with built-in heat sink ensures efficient heat dissipation and space-saving design.

Minimum Supply Voltage (Vsup): 9 V

With a minimum supply voltage of 9V, this IC can still operate reliably even under lower voltage conditions, providing flexibility in power supply requirements.

Adjustable Threshold: YES

The ability to adjust the threshold voltage allows for customized power management settings, making it suitable for a wide range of applications and power requirements.

Technical Specifications

Power Management ICs NIS5102QP1HT1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-XDSO-N12

JESD-609 Code:

e3

Length:

9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC12,.36

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.95 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

9 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

9 mm

Trade Compliance

NIS5102QP1HT1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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