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NIS5132MN1T1G

Onsemi

NIS5132MN1T1G by Onsemi

NIS5132MN1T1G by Onsemi is a Power Management IC with 10 terminals, nominal voltage of 12V, and package style in small outline. It is designed for power supply support circuits, suitable for applications requiring a supply voltage range from 9V to 18V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,544 parts In-Stock

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Vyrian

USA . 788 parts In-Stock

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788

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SupplyDigital Components

Austria . 6,038 parts In-Stock

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6,038

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Problanco Electronics

Mexico . 3,259 parts In-Stock

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Kulean Microsystems

USA . 3,059 parts In-Stock

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Corphita

USA . 637 parts In-Stock

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TANS Electronics

Latvia . 571 parts In-Stock

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Corohmni

South Africa . 169 parts In-Stock

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UHIMA Technologies

Türkiye . 164 parts In-Stock

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Overview

Experience the power of efficient and reliable power management with the NIS5132MN1T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Management ICs that are perfect for a wide range of applications. With surface mount capability and a small outline package style, this product offers convenience and versatility. Whether you're looking to optimize power supply support circuits or enhance performance in your devices, the NIS5132MN1T1G provides the value, benefits, and advantages that customers need to succeed. Upgrade your power management solutions today with Onsemi's innovative technology.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient mounting on a PCB, saving space and simplifying the assembly process.

Nominal Supply Voltage (Vsup): 12 V

Suitable for applications requiring a stable 12V power supply, ensuring compatibility with a wide range of devices.

Package Style (Meter): SMALL OUTLINE

Compact package size helps in space-constrained designs while providing necessary functionality.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and connectivity options, enhancing versatility.

Maximum Seated Height: 1 mm

Low seated height enables a sleek and slim profile for the overall product, ideal for compact electronic devices.

Minimum Supply Voltage (Vsup): 9 V

Supports operation with a minimum supply voltage of 9V, ensuring reliable performance under varying input conditions.

Terminal Form: NO LEAD

No-lead terminal form improves solderability and reduces the risk of solder joint failures, enhancing product reliability.

Maximum Supply Voltage (Vsup): 18 V

Wide input voltage range of up to 18V provides flexibility in powering different types of circuits and components.

Technical Specifications

Power Management ICs NIS5132MN1T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-XDSO-N10

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

10

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

9 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3 mm

Trade Compliance

NIS5132MN1T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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