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NIS5101E1T1G

Onsemi

NIS5101E1T1G by Onsemi

NIS5101E1T1G by Onsemi is a Power Management IC with 7 terminals, suitable for power supply support circuits. It operates at a nominal voltage of 48V and has a small outline package style. With surface mount capability and gull wing terminal form, it is ideal for compact electronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,455 parts In-Stock

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Digiode

USA . 400 parts In-Stock

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400

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J2 Sourcing AB

Sweden . 110 parts In-Stock

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110

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ECAB

Sweden . 28 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 911 parts In-Stock

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$15.150

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911

$15.150

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SupplyDigital Components

Austria . 8,369 parts In-Stock

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TANS Electronics

Latvia . 5,303 parts In-Stock

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Problanco Electronics

Mexico . 4,282 parts In-Stock

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Corphita

USA . 2,258 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 558 parts In-Stock

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558

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Kulean Microsystems

USA . 450 parts In-Stock

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Corohmni

South Africa . 436 parts In-Stock

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Microchip USA

USA . 393 parts In-Stock

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Vigor

Singapore . 148 parts In-Stock

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Overview

Power up your devices with the NIS5101E1T1G by Onsemi! As a leading manufacturer in the industry of Power Management ICs, Onsemi brings you a reliable and efficient solution to power supply support circuits. With its small outline package design, this IC offers convenience and ease of installation for a variety of applications. Say goodbye to power disruptions and hello to seamless operations with the NIS5101E1T1G. Trust in Onsemi's quality and innovation to deliver the performance you need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the power management IC.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage (Vsup): 48 V

Supports a wide range of applications that require a 48V power supply.

No. of Terminals: 7

Offers flexibility for connecting various components in the system.

Maximum Seated Height: 2.03 mm

Enables a compact and space-saving design for the overall system layout.

Terminal Finish: TIN

Provides good electrical conductivity for efficient power transfer.

Terminal Position: SINGLE

Simplifies the installation process and reduces the chances of errors during connections.

Technical Specifications

Power Management ICs NIS5101E1T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

REQUIRES A NEGATIVE VOLTAGE OF -48V

Adjustable Threshold:

NO

JESD-30 Code:

R-PSSO-G7

JESD-609 Code:

e3

Length:

9.395 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

7

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SMSIP7H,.4,50TB

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Sub-Category:

Power Management Circuits

Nominal Supply Voltage (Vsup):

48 V

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Width (mm):

8 mm

Trade Compliance

NIS5101E1T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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