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NIS5101E2T1

Onsemi

NIS5101E2T1 by Onsemi

NIS5101E2T1 by Onsemi is a Power Management IC with 48V Vsup. It features 7 terminals, GULL WING form, and SMALL OUTLINE package style. Ideal for POWER SUPPLY SUPPORT CIRCUIT applications due to its compact size and surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 8,500 parts In-Stock

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Vyrian

USA . 8,167 parts In-Stock

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Semi Source

USA . 7,794 parts In-Stock

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Infinite Electronics LLP

India . 263 parts In-Stock

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Digiode

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Prism Electronics

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AZTECH Wire

Italy . 1,148 parts In-Stock

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$15.580

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Component Stockers USA

USA . 646 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 6,820 parts In-Stock

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Problanco Electronics

Mexico . 6,572 parts In-Stock

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SupplyDigital Components

Austria . 2,551 parts In-Stock

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Corphita

USA . 2,238 parts In-Stock

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TANS Electronics

Latvia . 2,123 parts In-Stock

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UHIMA Technologies

Türkiye . 609 parts In-Stock

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Vigor

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Corohmni

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Microchip USA

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Overview

Power up your electronics with the NIS5101E2T1 by Onsemi, a top-of-the-line Power Management IC designed to deliver superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers unparalleled quality and precision. Ideal for a wide range of applications, this Power Management IC is perfect for maximizing efficiency and optimizing power consumption in your devices. Experience the value and benefits of choosing Onsemi's NIS5101E2T1 - unmatched quality, advanced technology, and seamless integration for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for power management ICs due to its durability and heat resistance.

Surface Mount: YES

This makes it easier to mount the IC onto a circuit board, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 48 V

Suitable for applications requiring a higher voltage supply, making it versatile for different electronic systems.

No. of Terminals: 7

Having multiple terminals allows for more connections and functions, increasing the flexibility of the IC.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity, ensuring a reliable electrical connection.

Width (mm): 8 mm

Compact width allows for space-saving designs in electronic devices with limited board space.

Terminal Form: GULL WING

Gull wing terminals are easy to solder and provide mechanical strength, increasing the durability of the IC.

Terminal Pitch: 1.27 mm

Fine terminal pitch allows for precise connections and high-density mounting, optimizing board space usage.

Technical Specifications

Power Management ICs NIS5101E2T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

REQUIRES A NEGATIVE VOLTAGE OF -48V

Adjustable Threshold:

NO

JESD-30 Code:

R-PSSO-G7

JESD-609 Code:

e0

Length:

9.395 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

7

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SMSIP7H,.4,50TB

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Sub-Category:

Power Management Circuits

Nominal Supply Voltage (Vsup):

48 V

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Width (mm):

8 mm

Trade Compliance

NIS5101E2T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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