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NCV7517BFTR2G

Onsemi

NCV7517BFTR2G by Onsemi

NCV7517BFTR2G by Onsemi is a MOSFET gate driver with a max supply voltage of 5.55 V and turn-on/off time of 1 us, ideal for automotive applications. This AEC-Q100 compliant device comes in a flatpack, low profile package style with 32 terminals and operates b/w -40 to 125 °C temperature range.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 9,890 parts In-Stock

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Chip Stock

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Digiode

USA . 1,609 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 341 parts In-Stock

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$13.795

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Ampacity Inc.

Singapore . 1,199 parts In-Stock

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Perfect Parts

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RC Electronics

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Kepictronics

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Kulean Microsystems

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TANS Electronics

Latvia . 7,541 parts In-Stock

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Problanco Electronics

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Corphita

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SupplyDigital Components

Austria . 1,614 parts In-Stock

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Lixinc

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UHIMA Technologies

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Aranea Global

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Corohmni

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Microchip USA

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Vigor

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Overview

Enhance your automotive applications with the NCV7517BFTR2G by Onsemi, a top-quality MOSFET Gate Driver that delivers unparalleled performance and reliability. With Onsemi's expertise in semiconductor technology, this product offers exceptional value and benefits to customers looking for efficient power management solutions. Perfect for a wide range of automotive electronics, this driver ensures smooth operation and precise control, making it a must-have component for your next project. Experience the difference with Onsemi's NCV7517BFTR2G and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the gate driver, ensuring reliability and durability.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 5.25 V

Suitable for a wide range of applications while ensuring safe operation within the specified voltage limits.

Screening Level: AEC-Q100

Meets automotive industry standards for robustness, reliability, and quality, making it suitable for automotive applications.

Maximum Operating Temperature: 125 °C

Can function effectively in high-temperature environments, ensuring stable performance in various operating conditions.

Technical Specifications

MOSFET Gate Drivers NCV7517BFTR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

NO

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e3

Length:

7 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP32,.35SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.6 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.55 V

Minimum Supply Voltage-1:

4.45 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

1 us

Turn-on Time:

1 us

Width:

7 mm

Trade Compliance

NCV7517BFTR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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