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NCV7517BFTG

Onsemi

NCV7517BFTG by Onsemi

NCV7517BFTG by Onsemi is a MOSFET gate driver with a max supply voltage of 5.55 V and turn-on/off time of 1 us, ideal for automotive applications. This square-shaped driver has 32 terminals, operates in temperatures ranging from -40 to 125 °C, and features a low profile flatpack package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 811 parts In-Stock

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Digiode

USA . 667 parts In-Stock

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TANS Electronics

Latvia . 8,272 parts In-Stock

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Kulean Microsystems

USA . 3,666 parts In-Stock

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Problanco Electronics

Mexico . 2,864 parts In-Stock

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SupplyDigital Components

Austria . 2,155 parts In-Stock

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Corphita

USA . 1,277 parts In-Stock

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Corohmni

South Africa . 323 parts In-Stock

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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Overview

Experience unmatched reliability and performance with the NCV7517BFTG MOSFET Gate Driver by Onsemi. Designed with precision and quality in mind, this device is ideal for a wide range of applications in the automotive industry. With a maximum supply voltage of 5.25V, this driver offers excellent efficiency and control, ensuring seamless operation under extreme conditions. Trust Onsemi's expertise to deliver unparalleled value and benefits, making the NCV7517BFTG the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, ideal for automotive applications.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on the PCB.

Maximum Supply Voltage: 5.25 V

With a maximum supply voltage of 5.25 V, this MOSFET Gate Driver can handle higher voltage applications with ease.

Package Shape: SQUARE

The square package shape allows for easy alignment and placement on the PCB, enhancing the overall design and layout of the circuit.

Power Supplies (V): 5

Operating with a nominal supply voltage of 5 V, this gate driver is compatible with standard power sources, making it convenient for a variety of applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this gate driver can withstand harsh automotive environments and maintain reliable performance.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C ensures that this gate driver is suitable for use in extreme cold conditions.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5 V ensures consistent and stable power delivery to the gate driver for optimal performance.

Turn-on Time: 1 us

With a fast turn-on time of 1 us, this gate driver can quickly switch the MOSFETs on and off, improving efficiency and response time in the circuit.

Moisture Sensitivity Level (MSL): 3

The MSL 3 rating indicates that this gate driver has moderate sensitivity to moisture, making it suitable for a wide range of environments with varying humidity levels.

Technical Specifications

MOSFET Gate Drivers NCV7517BFTG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

NO

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e3

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP32,.35SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.6 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.55 V

Minimum Supply Voltage-1:

4.45 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Turn-off Time:

1 us

Turn-on Time:

1 us

Width:

7 mm

Trade Compliance

NCV7517BFTG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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