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NCV7513BFTR2G

Onsemi

NCV7513BFTR2G by Onsemi

NCV7513BFTR2G by Onsemi is a MOSFET gate driver with a max supply voltage of 5.55 V and turn-on/off time of 1 us, suitable for automotive applications. This AEC-Q100 compliant driver has 32 terminals in a square flatpack package style, operating b/w -40 to 125 °C temperature range.

Median Price

$3.150

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 24,243 parts In-Stock

1+ parts

$3.150

100+ parts

$3.090

1k+ parts

$3.020

10k+ parts

-

24,243

$3.150

$3.090

$3.020

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$11.483

100+ parts

-

1k+ parts

-

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50

$11.483

-

-

-

Chip Stock

USA . 23,500 parts In-Stock

1+ parts

-

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23,500

-

-

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J2 Sourcing AB

Sweden . 6,960 parts In-Stock

1+ parts

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6,960

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Vyrian

USA . 4,049 parts In-Stock

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4,049

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Digiode

USA . 247 parts In-Stock

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247

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Distributors (Availability)

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Vigor

Singapore . 945 parts In-Stock

1+ parts

$2.100

100+ parts

-

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945

$2.100

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AZTECH Wire

Italy . 204 parts In-Stock

1+ parts

$14.760

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204

$14.760

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Ampacity Inc.

Singapore . 510 parts In-Stock

1+ parts

$25.500

100+ parts

-

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510

$25.500

-

-

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Component Stockers USA

USA . 574 parts In-Stock

1+ parts

$99.990

100+ parts

-

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574

$99.990

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Perfect Parts

USA . 77,127 parts In-Stock

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77,127

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Kepictronics

USA . 62,000 parts In-Stock

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62,000

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RC Electronics

USA . 42,945 parts In-Stock

1+ parts

-

100+ parts

$1.350

1k+ parts

$1.230

10k+ parts

$1.190

42,945

-

$1.350

$1.230

$1.190

Futuretech Components

Singapore . 20,000 parts In-Stock

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20,000

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SupplyDigital Components

Austria . 7,654 parts In-Stock

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7,654

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TANS Electronics

Latvia . 4,153 parts In-Stock

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4,153

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Kulean Microsystems

USA . 3,764 parts In-Stock

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3,764

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Problanco Electronics

Mexico . 2,582 parts In-Stock

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2,582

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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2,000

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Assy Fe

Spain . 1,836 parts In-Stock

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1,836

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Netroflash

USA . 500 parts In-Stock

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500

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Microchip USA

USA . 493 parts In-Stock

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493

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Corohmni

South Africa . 309 parts In-Stock

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309

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Corphita

USA . 304 parts In-Stock

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304

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ChipstoGo Electronic ltd

UK . 292 parts In-Stock

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UHIMA Technologies

Türkiye . 236 parts In-Stock

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236

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Overview

Discover the NCV7513BFTR2G by Onsemi, a top-quality MOSFET Gate Driver designed to deliver exceptional performance in automotive applications. With a wide operating temperature range, high reliability, and AEC-Q100 screening level, this product guarantees optimal functionality and durability. Perfect for automotive systems, power management, and motor control, the NCV7513BFTR2G offers unparalleled value and efficiency to customers looking for superior electronic components. Upgrade your projects with this innovative solution from a trusted manufacturer like Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good thermal performance and durability, making the product reliable for various operating conditions.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on PCBs, saving space and simplifying manufacturing processes.

Maximum Supply Voltage: 5.25 V

Operating at up to 5.25 V ensures compatibility with a wide range of power supply systems, offering flexibility in application.

Screening Level: AEC-Q100

AEC-Q100 certification ensures that the product meets automotive industry standards, guaranteeing high quality and reliability for automotive applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, the product can withstand high temperature environments, ideal for automotive and industrial applications.

Technical Specifications

MOSFET Gate Drivers NCV7513BFTR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

NO

JESD-30 Code:

S-PQFP-G32

JESD-609 Code:

e3

Length:

7 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

QFP32,.35SQ,32

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.55 V

Minimum Supply Voltage-1:

4.45 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

1 us

Turn-on Time:

1 us

Width:

7 mm

Trade Compliance

NCV7513BFTR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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