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NCV7520MWTXG

Onsemi

NCV7520MWTXG by Onsemi

NCV7520MWTXG by Onsemi is a MOSFET gate driver with a max supply voltage of 5.55V and turn-on/off time of 2us, ideal for automotive applications. It features AEC-Q100 screening level, operates in temperatures ranging from -40 to 125 °C, and has a compact square package style.

Median Price

$4.280

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,788 parts In-Stock

1+ parts

$4.280

100+ parts

$2.980

1k+ parts

$2.140

10k+ parts

$2.000

4,788

$4.280

$2.980

$2.140

$2.000

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.377

100+ parts

-

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10

$2.377

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Digiode

USA . 592 parts In-Stock

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$4.066

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592

$4.066

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Vyrian

USA . 14,279 parts In-Stock

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14,279

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Chip Stock

USA . 11,450 parts In-Stock

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Cyclops Electronics Ltd

UK . 10,000 parts In-Stock

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Flip Electronics

USA . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Corohmni

South Africa . 194 parts In-Stock

1+ parts

$2.128

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194

$2.128

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Continental Prestige Electronics

USA . 1,745 parts In-Stock

1+ parts

$2.377

100+ parts

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1k+ parts

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10k+ parts

$2.330

1,745

$2.377

-

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$2.330

Argo Parts USA

USA . 533 parts In-Stock

1+ parts

$2.377

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533

$2.377

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Semicontronic

India . 6,305 parts In-Stock

1+ parts

$3.640

100+ parts

$3.549

1k+ parts

$3.531

10k+ parts

-

6,305

$3.640

$3.549

$3.531

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Ampacity Inc.

Singapore . 6,043 parts In-Stock

1+ parts

$3.640

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6,043

$3.640

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Corphita

USA . 2,305 parts In-Stock

1+ parts

$3.852

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2,305

$3.852

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Microchip USA

USA . 6,366 parts In-Stock

1+ parts

$14.111

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6,366

$14.111

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$14.239

100+ parts

$12.957

1k+ parts

$11.676

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40

$14.239

$12.957

$11.676

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Aztec Data Supply Inc.

USA . 4,894 parts In-Stock

1+ parts

$14.300

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$14.300

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RC Electronics

USA . 30,277 parts In-Stock

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Perfect Parts

USA . 10,931 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 6,896 parts In-Stock

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Lixinc

USA . 5,873 parts In-Stock

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Problanco Electronics

Mexico . 5,790 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$2.330

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$2.258

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$2.211

500

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$2.330

$2.258

$2.211

TANS Electronics

Latvia . 54 parts In-Stock

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Kulean Microsystems

USA . 42 parts In-Stock

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Overview

Enhance the performance of your automotive applications with the NCV7520MWTXG by Onsemi. This MOSFET gate driver offers reliability and quality, meeting AEC-Q100 standards. Its compact square package shape and very thin profile make it perfect for space-constrained designs. With a maximum supply voltage of 5.55V and fast turn-on/off times of 2us, this buffer/inverter-based driver ensures efficient operation. Trust in Onsemi's expertise and elevate your projects with the NCV7520MWTXG.

Feature Benefit Bullets

Surface Mount: YES

This feature allows for easy and convenient installation on circuit boards.

Maximum Supply Voltage: 5.25 V

Provides a high maximum supply voltage for versatility in different applications.

Screening Level: AEC-Q100

Ensures high reliability and quality standards for automotive applications.

Package Shape: SQUARE

The square package shape provides efficient use of space on the circuit board.

Maximum Supply Voltage-1: 5.55 V

Offers a slightly higher maximum supply voltage for added safety margin.

No. of Terminals: 32

With a high number of terminals, this gate driver can support complex circuit configurations.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

This package style offers both thermal management and space-saving benefits.

Minimum Supply Voltage-1: 4.45 V

With a low minimum supply voltage, this gate driver can operate efficiently in various conditions.

Minimum Supply Voltage: 4.75 V

Provides a reliable minimum supply voltage for consistent performance.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures, suitable for demanding environments.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely cold temperatures for diverse applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance.

Terminal Position: QUAD

The quad terminal position allows for easy integration into circuit layouts.

Maximum Seated Height: 0.9 mm

With a low seated height, this gate driver can fit into compact spaces.

Width: 5 mm

The narrow width enables placement in tight spaces on the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

This gate driver can withstand peak reflow temperatures for quick and efficient soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures durability during assembly processes.

Length: 5 mm

The short length of this gate driver saves space on the circuit board.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, ensuring performance in harsh conditions.

Terminal Form: NO LEAD

The no-lead terminal form simplifies installation and improves reliability.

Nominal Supply Voltage: 5 V

The nominal supply voltage provides stable power for consistent operation.

Turn-on Time: 2 us

With a fast turn-on time, this gate driver can quickly switch MOSFETs for efficient power management.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for high-density mounting on the board.

Nominal Supply Voltage-1: 5 V

Another confirmation of stable power supply for reliable operation.

Moisture Sensitivity Level (MSL): 3

The moisture sensitivity level ensures long-term reliability in various environments.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

This gate driver supports multiple interface types for flexibility in system design.

Turn-off Time: 2 us

The fast turn-off time contributes to efficient switching of MOSFETs for optimal performance.

Technical Specifications

MOSFET Gate Drivers NCV7520MWTXG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

NO

JESD-30 Code:

S-XQCC-N32

JESD-609 Code:

e3

Length:

5 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.55 V

Minimum Supply Voltage-1:

4.45 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

2 us

Turn-on Time:

2 us

Width:

5 mm

Trade Compliance

NCV7520MWTXG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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