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NCV7513AFTR2G

Onsemi

NCV7513AFTR2G by Onsemi

NCV7513AFTR2G by Onsemi is a MOSFET gate driver with 32 terminals, operating at temperatures from -40 to 125 °C. It has a supply voltage range of 4.75-5.25V and turn-on/off times of 1000µs, suitable for automotive applications requiring high-speed switching control in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,859 parts In-Stock

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Digiode

USA . 958 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$3.751

100+ parts

$3.413

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$3.076

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40

$3.751

$3.413

$3.076

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AZTECH Wire

Italy . 569 parts In-Stock

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$14.420

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569

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Problanco Electronics

Mexico . 5,044 parts In-Stock

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SupplyDigital Components

Austria . 4,373 parts In-Stock

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Authorized Procurement Solutions

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4,000

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TANS Electronics

Latvia . 1,347 parts In-Stock

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UHIMA Technologies

Türkiye . 949 parts In-Stock

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Kulean Microsystems

USA . 663 parts In-Stock

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Vigor

Singapore . 542 parts In-Stock

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Corphita

USA . 497 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 69 parts In-Stock

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Overview

Enhance the performance of your automotive applications with the NCV7513AFTR2G MOSFET Gate Driver from Onsemi. With a maximum supply voltage of 5.25V and AEC-Q100 screening level, this surface mount device offers reliability and durability in even the harshest environments. Its compact square package shape and low profile design make it ideal for space-constrained applications. Trust Onsemi's reputation for quality and innovation to deliver exceptional value and efficiency to your projects. Experience the benefits of seamless power management and precise control with the NCV7513AFTR2G.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for compact and space-saving designs, making this MOSFET gate driver suitable for applications where board space is limited.

Maximum Supply Voltage: 5.25 V

With a high maximum supply voltage, this gate driver can support a wide range of power supply requirements, providing flexibility in design.

Screening Level: AEC-Q100

Being AEC-Q100 compliant ensures that this MOSFET gate driver meets the stringent quality and reliability standards required for automotive applications.

Package Shape: SQUARE

The square package shape allows for easy integration into circuit designs and ensures a uniform footprint for consistent assembly.

Power Supplies (V): 3.3,5

Support for multiple power supply voltages enables compatibility with a variety of system configurations, enhancing the versatility of this gate driver.

No. of Terminals: 32

The high number of terminals provides ample connection points for interfacing with external components, allowing for complex circuit designs.

Package Style (Meter): FLATPACK, LOW PROFILE

The flatpack, low profile package style offers a slim profile for space-constrained applications while ensuring efficient heat dissipation.

Minimum Supply Voltage: 4.75 V

With a low minimum supply voltage, this gate driver can operate effectively even in low power situations, making it suitable for a wide range of applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable operation in demanding environments, such as automotive or industrial applications.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures that this MOSFET gate driver can function reliably in extreme temperature conditions, enhancing its versatility.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and ensures stable electrical connections, contributing to the overall reliability of the gate driver.

Terminal Position: QUAD

The quad terminal position allows for easy mounting and soldering onto the PCB, simplifying the assembly process for the end user.

Maximum Seated Height: 1.6 mm

The low maximum seated height makes this gate driver suitable for applications with tight height constraints, enabling compact and sleek designs.

Width: 7 mm

The compact width of 7 mm ensures that this gate driver can be easily integrated into different system layouts, optimizing space utilization.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures that this MOSFET gate driver can withstand the reflow soldering process without damage, ensuring robust assembly.

Length: 7 mm

The compact length of 7 mm allows for easy placement on the PCB and facilitates efficient routing of signal traces, reducing signal interference.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade certification indicates that this gate driver is specifically designed to meet the rigorous thermal requirements of automotive applications.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of soldering, ensuring reliable electrical connections in challenging operating conditions.

Nominal Supply Voltage: 5 V

The 5 V nominal supply voltage ensures compatibility with standard power sources, simplifying integration into existing systems.

Turn-on Time: 1000 us

The fast turn-on time of 1000 microseconds ensures rapid switching of the MOSFETs, enhancing the efficiency and performance of the overall system.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8 mm allows for dense packing of terminals on the PCB, enabling high-density designs without compromising on reliability.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The choice of buffer or inverter based MOSFET driver interface IC types provides flexibility in driving and control options, catering to a wide range of application requirements.

Turn-off Time: 1000 us

The fast turn-off time of 1000 microseconds ensures quick switching of the MOSFETs, minimizing switching losses and improving overall system efficiency.

Technical Specifications

MOSFET Gate Drivers NCV7513AFTR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

NO

JESD-30 Code:

S-XQFP-G32

JESD-609 Code:

e3

Length:

7 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

QFP32,.35SQ,32

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3,5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.6 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Turn-off Time:

1000 us

Turn-on Time:

1000 us

Width:

7 mm

Trade Compliance

NCV7513AFTR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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