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NCV7518MWATXG

Onsemi

NCV7518MWATXG by Onsemi

NCV7518MWATXG by Onsemi is a MOSFET Gate Driver with 32 terminals, suitable for automotive applications. It operates b/w -40 to 125 °C and has a supply voltage range of 10-20 V. With a turn-on/off time of 150 us, it features an interface IC type of BUFFER OR INVERTER BASED MOSFET DRIVER.

Median Price

$2.112

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,570 parts In-Stock

1+ parts

$3.910

100+ parts

$2.448

1k+ parts

$2.306

10k+ parts

-

3,570

$3.910

$2.448

$2.306

-

Rochester

USA . 10,493 parts In-Stock

1+ parts

-

100+ parts

$1.890

1k+ parts

$1.690

10k+ parts

$1.590

10,493

-

$1.890

$1.690

$1.590

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.112

10k+ parts

$1.988

10,000

-

-

$2.112

$1.988

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 807 parts In-Stock

1+ parts

$4.883

100+ parts

-

1k+ parts

-

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807

$4.883

-

-

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Vyrian

USA . 2,062 parts In-Stock

1+ parts

$5.140

100+ parts

-

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2,062

$5.140

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-

Chip Stock

USA . 42,000 parts In-Stock

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42,000

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Bristol Electronics

USA . 3,161 parts In-Stock

1+ parts

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3,161

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

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550

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vigor

Singapore . 360 parts In-Stock

1+ parts

$2.100

100+ parts

-

1k+ parts

-

10k+ parts

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360

$2.100

-

-

-

Ampacity Inc.

Singapore . 4,117 parts In-Stock

1+ parts

$4.370

100+ parts

-

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10k+ parts

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4,117

$4.370

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Corphita

USA . 1,652 parts In-Stock

1+ parts

$4.626

100+ parts

-

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1,652

$4.626

-

-

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Corohmni

South Africa . 63 parts In-Stock

1+ parts

$5.140

100+ parts

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63

$5.140

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Component Stockers USA

USA . 1,702 parts In-Stock

1+ parts

$18.030

100+ parts

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1,702

$18.030

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iodParts Technologies Inc.

India . 15,000 parts In-Stock

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15,000

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Problanco Electronics

Mexico . 7,417 parts In-Stock

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7,417

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TANS Electronics

Latvia . 6,111 parts In-Stock

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6,111

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SupplyDigital Components

Austria . 2,292 parts In-Stock

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2,292

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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Kulean Microsystems

USA . 725 parts In-Stock

1+ parts

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725

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UHIMA Technologies

Türkiye . 480 parts In-Stock

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480

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Microchip USA

USA . 105 parts In-Stock

1+ parts

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105

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Overview

Enhance the performance of your automotive electronics with the NCV7518MWATXG MOSFET Gate Driver by Onsemi. Designed with precision and reliability in mind, this high-quality product offers seamless integration and superior control for your applications. With a wide range of operating temperatures and a compact package shape, this gate driver ensures optimal functionality while maximizing efficiency. Trust Onsemi's expertise and elevate your projects with the NCV7518MWATXG - the perfect solution for all your automotive needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the gate driver, ensuring reliability and durability.

Surface Mount: YES

Allows for easy and convenient installation on printed circuit boards, saving space and enabling automated assembly processes.

Maximum Supply Voltage: 20 V

Can handle high supply voltages, making it suitable for a wide range of applications.

Screening Level: AEC-Q100

Compliant with automotive industry standards, ensuring robust performance in harsh operating conditions.

Width: 5 mm

Compact size allows for easy integration into tight spaces or on densely populated PCBs.

High Side Driver: YES

Capable of driving high side MOSFETs, providing flexibility in circuit design and allowing for control of power devices in various configurations.

Turn-on Time: 150 us

Fast turn-on time ensures quick response and high switching speeds, ideal for applications requiring precise timing and low latency.

Technical Specifications

MOSFET Gate Drivers NCV7518MWATXG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e3

Length:

5 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Maximum Supply Current:

.01 mA

Maximum Supply Voltage:

20 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

150 us

Turn-on Time:

150 us

Width:

5 mm

Trade Compliance

NCV7518MWATXG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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