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NCV1076P130G

Onsemi

NCV1076P130G by Onsemi

NCV1076P130G by Onsemi is a switching controller with a supply voltage of 8V, operating temperature range from -40 to 125 °C, and max switching frequency of 143 kHz. It is designed for automotive applications requiring current-mode control and pulse width modulation techniques in a compact rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,160 parts In-Stock

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Digiode

USA . 258 parts In-Stock

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258

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Vigor

Singapore . 790 parts In-Stock

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$1.530

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$1.530

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Ampacity Inc.

Singapore . 817 parts In-Stock

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$4.500

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Microchip USA

USA . 2,586 parts In-Stock

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$9.935

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AZTECH Wire

Italy . 868 parts In-Stock

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$19.740

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Kulean Microsystems

USA . 6,365 parts In-Stock

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SupplyDigital Components

Austria . 6,073 parts In-Stock

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TANS Electronics

Latvia . 4,786 parts In-Stock

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Problanco Electronics

Mexico . 1,451 parts In-Stock

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Corphita

USA . 743 parts In-Stock

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UHIMA Technologies

Türkiye . 314 parts In-Stock

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Corohmni

South Africa . 275 parts In-Stock

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iodParts Technologies Inc.

India . 250 parts In-Stock

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Overview

Experience unparalleled reliability and performance with the NCV1076P130G from Onsemi. As a leader in switching regulators & controllers, Onsemi sets the standard for quality in the industry. Designed for automotive applications, this product offers customers unmatched value and benefits. With its innovative technology and advanced features, the NCV1076P130G provides efficient power management solutions, making it the ideal choice for your next project. Trust Onsemi to deliver superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various operating conditions.

Screening Level: AEC-Q100

This product meets automotive industry standards for reliability and quality, making it suitable for automotive applications.

Nominal Supply Voltage (Vsup): 8 V

The 8V supply voltage makes it compatible with a wide range of applications requiring this voltage level.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can function effectively even in harsh environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this product to operate in extreme cold conditions where other regulators may fail.

Maximum Seated Height: 5.33 mm

The compact size with maximum seated height of 5.33mm makes it suitable for applications with space constraints.

Maximum Switching Frequency: 143 kHz

The high maximum switching frequency allows for efficient power conversion and regulation in various electronic devices.

Technology: MOS

The MOS technology ensures high efficiency and reliability in switching operations.

Technical Specifications

Switching Regulators & Controllers NCV1076P130G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

JESD-30 Code:

R-PDIP-T7

Length:

9.59 mm

No. of Functions:

1

No. of Terminals:

7

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP7/8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

5.33 mm

Maximum Supply Current (Isup):

1.3 mA

Nominal Supply Voltage (Vsup):

8 V

Surface Mount:

NO

Switcher Config:

BUCK-BOOST

Maximum Switching Frequency:

143 kHz

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

7.62 mm

Trade Compliance

NCV1076P130G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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