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NCV1071STBT3G

Onsemi

NCV1071STBT3G by Onsemi

NCV1071STBT3G by Onsemi is a switching controller with current-mode control and pulse width modulation. It operates in automotive applications, with a supply voltage of 8V, max temperature of 125 °C, and switching frequency up to 110 kHz. The package is small outline, surface mountable, AEC-Q100 qualified, and has a gull wing terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,460 parts In-Stock

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Vyrian

USA . 661 parts In-Stock

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Problanco Electronics

Mexico . 7,338 parts In-Stock

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SupplyDigital Components

Austria . 6,461 parts In-Stock

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Corphita

USA . 973 parts In-Stock

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TANS Electronics

Latvia . 799 parts In-Stock

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UHIMA Technologies

Türkiye . 513 parts In-Stock

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Corohmni

South Africa . 449 parts In-Stock

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Kulean Microsystems

USA . 280 parts In-Stock

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Overview

Upgrade your electronic devices with the NCV1071STBT3G by Onsemi, a top-notch switching regulator and controller designed for high quality performance. Manufactured by Onsemi, a trusted name in the industry, this product offers superior reliability and precision. Ideal for automotive applications, this compact device delivers exceptional value and efficiency, ensuring optimal power management for your projects. Experience the benefits of the NCV1071STBT3G today and elevate your electronics to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the product, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly processes, saving time and labor costs.

Package Shape: RECTANGULAR

The rectangular shape offers versatility in fitting into different layouts and designs of electronic systems.

Nominal Supply Voltage (Vsup): 8 V

A nominal supply voltage of 8V provides a stable power source for the switching regulator, ensuring consistent performance.

Control Mode: CURRENT-MODE

Current-mode control offers improved stability and transient response, enhancing the overall efficiency of the switching regulator.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, making it suitable for automotive applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in extreme cold environments.

Maximum Supply Current (Isup): 1.3 mA

Low supply current consumption helps in reducing power consumption and prolonging battery life in portable electronic devices.

Control Technique: PULSE WIDTH MODULATION

Pulse width modulation control technique provides precise regulation of output voltage, improving overall efficiency and performance of the regulator.

Technical Specifications

Switching Regulators & Controllers NCV1071STBT3G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

JESD-30 Code:

R-PDSO-G4

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOT-223

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Current (Isup):

1.3 mA

Nominal Supply Voltage (Vsup):

8 V

Surface Mount:

YES

Switcher Config:

BUCK-BOOST

Maximum Switching Frequency:

110 kHz

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

2.3 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.5 mm

Trade Compliance

NCV1071STBT3G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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