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NCV1071P100G

Onsemi

NCV1071P100G by Onsemi

NCV1071P100G by Onsemi is a switching controller with 7 terminals, operating b/w -40 to 125 °C. It features a max switching frequency of 110 kHz and uses pulse width modulation for control. Ideal for automotive applications due to AEC-Q100 screening level and MOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 604 parts In-Stock

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Vyrian

USA . 290 parts In-Stock

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TANS Electronics

Latvia . 4,454 parts In-Stock

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SupplyDigital Components

Austria . 3,670 parts In-Stock

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Corphita

USA . 2,108 parts In-Stock

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UHIMA Technologies

Türkiye . 706 parts In-Stock

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Problanco Electronics

Mexico . 202 parts In-Stock

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Kulean Microsystems

USA . 159 parts In-Stock

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Corohmni

South Africa . 153 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of the NCV1071P100G by Onsemi, a leading manufacturer in the industry. This switching regulator/controller offers automotive-grade performance with AEC-Q100 screening level, making it ideal for a wide range of applications. With pulse width modulation control technique and buck-boost switcher configuration, this product provides efficient power management at a nominal supply voltage of 8V. Trust in Onsemi for innovative technology and exceptional value that exceeds customer expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and cost-effective.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality standards, making this product suitable for automotive applications.

Nominal Supply Voltage (Vsup): 8 V

The 8V nominal supply voltage ensures compatibility with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this product can withstand high temperature environments.

Maximum Seated Height: 5.33 mm

The low maximum seated height makes this product suitable for applications with space constraints.

Maximum Switching Frequency: 110 kHz

The high maximum switching frequency of 110 kHz allows for efficient power conversion.

Control Technique: PULSE WIDTH MODULATION

Pulse width modulation control technique offers precise control over output voltage, making this product versatile.

Technical Specifications

Switching Regulators & Controllers NCV1071P100G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

JESD-30 Code:

R-PDIP-T7

Length:

9.59 mm

No. of Functions:

1

No. of Terminals:

7

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP7/8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

5.33 mm

Maximum Supply Current (Isup):

1.3 mA

Nominal Supply Voltage (Vsup):

8 V

Surface Mount:

NO

Switcher Config:

BUCK-BOOST

Maximum Switching Frequency:

110 kHz

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

7.62 mm

Trade Compliance

NCV1071P100G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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