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NCV1070STCT3G

Onsemi

NCV1070STCT3G by Onsemi

NCV1070STCT3G by Onsemi is a switching controller with current-mode control technique, operating at -40 to 125 °C. It features a max switching frequency of 143 kHz and peak reflow temperature of 260°C. Ideal for automotive applications due to AEC-Q100 screening level and MOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,019 parts In-Stock

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Vyrian

USA . 1,516 parts In-Stock

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Kulean Microsystems

USA . 7,369 parts In-Stock

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SupplyDigital Components

Austria . 5,188 parts In-Stock

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TANS Electronics

Latvia . 4,639 parts In-Stock

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Problanco Electronics

Mexico . 4,624 parts In-Stock

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Corphita

USA . 1,792 parts In-Stock

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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Corohmni

South Africa . 333 parts In-Stock

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Overview

Experience superior performance and reliability with the NCV1070STCT3G from Onsemi, a leader in cutting-edge technology. This switching regulator/controller offers automotive-grade quality and AEC-Q100 screening for peace of mind. Perfect for applications requiring precise current control, this compact device ensures efficient power management. Say goodbye to overheating and inefficiency with this innovative product that delivers exceptional value and unmatched benefits. Upgrade your systems with the NCV1070STCT3G today and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components of the switching regulator.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures high reliability and quality, making this product suitable for automotive applications.

Nominal Supply Voltage (Vsup): 8 V

The 8V nominal supply voltage enables compatibility with a wide range of power sources, making it versatile for various applications.

No. of Terminals: 4

Having 4 terminals allows for easy connectivity and integration into existing circuit designs.

Control Mode: CURRENT-MODE

The current-mode control mode offers improved transient response and stability in regulating output voltage.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures reliable performance even in harsh operating environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows for reliable operation in cold environments or during start-up conditions.

Maximum Switching Frequency: 143 kHz

The high maximum switching frequency of 143 kHz allows for efficient power conversion and reduced component size.

Technology: MOS

The MOS technology offers high efficiency and fast switching speeds, reducing power losses and improving overall performance.

Technical Specifications

Switching Regulators & Controllers NCV1070STCT3G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

JESD-30 Code:

R-PDSO-G4

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOT-223

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Current (Isup):

1.3 mA

Nominal Supply Voltage (Vsup):

8 V

Surface Mount:

YES

Switcher Config:

BUCK-BOOST

Maximum Switching Frequency:

143 kHz

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

2.3 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.5 mm

Trade Compliance

NCV1070STCT3G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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