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NCV1070P130G

Onsemi

NCV1070P130G by Onsemi

NCV1070P130G by Onsemi is a switching controller with AEC-Q100 screening level, operating at -40 to 125 °C. It features a current-mode control technique, 143 kHz max switching frequency, and 8V nominal voltage. Ideal for automotive applications due to its MOS technology and buck-boost switcher configuration in an in-line package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,166 parts In-Stock

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Vyrian

USA . 369 parts In-Stock

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SupplyDigital Components

Austria . 7,782 parts In-Stock

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TANS Electronics

Latvia . 6,348 parts In-Stock

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Kulean Microsystems

USA . 4,113 parts In-Stock

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Corphita

USA . 1,797 parts In-Stock

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Problanco Electronics

Mexico . 746 parts In-Stock

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Corohmni

South Africa . 449 parts In-Stock

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UHIMA Technologies

Türkiye . 29 parts In-Stock

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Overview

Elevate your automotive electronic designs with the NCV1070P130G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality switching regulators and controllers like this one, designed with AEC-Q100 screening level for reliability. With its current-mode control mode and pulse width modulation technique, this switching controller offers precise power management for automotive applications. Experience the benefits of efficient power conversion, low supply current, and wide temperature range capabilities. Trust Onsemi to provide you with the cutting-edge technology you need for your next automotive project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for automotive applications where weight and durability are important factors.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures that the product meets automotive industry standards for reliability and quality, making it a reliable choice for automotive applications.

Nominal Supply Voltage (Vsup): 8 V

The 8 V nominal supply voltage allows for efficient power management and operation in various automotive electronic systems requiring this voltage.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, the product can withstand high temperature environments common in automotive applications.

Control Mode: CURRENT-MODE

The current-mode control mode ensures stable and efficient operation, making the product suitable for applications where precise current control is required.

Maximum Switching Frequency: 143 kHz

The high maximum switching frequency of 143 kHz allows for fast and efficient power conversion, making the product ideal for applications where fast response times are needed.

Technology: MOS

The use of MOS technology ensures efficient power conversion with minimal power losses, making the product energy-efficient and suitable for automotive applications requiring high efficiency.

Technical Specifications

Switching Regulators & Controllers NCV1070P130G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

JESD-30 Code:

R-PDIP-T7

Length:

9.59 mm

No. of Functions:

1

No. of Terminals:

7

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP7/8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

5.33 mm

Maximum Supply Current (Isup):

1.3 mA

Nominal Supply Voltage (Vsup):

8 V

Surface Mount:

NO

Switcher Config:

BUCK-BOOST

Maximum Switching Frequency:

143 kHz

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

7.62 mm

Trade Compliance

NCV1070P130G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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