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NCV1070STBT3G

Onsemi

NCV1070STBT3G by Onsemi

NCV1070STBT3G by Onsemi is a switching controller with current-mode control technique. It operates in automotive applications with a supply voltage of 8V, supporting a max switching frequency of 110kHz. This MOS technology device comes in a small outline package, making it suitable for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,714 parts In-Stock

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Vyrian

USA . 278 parts In-Stock

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Problanco Electronics

Mexico . 5,639 parts In-Stock

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SupplyDigital Components

Austria . 4,662 parts In-Stock

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Corphita

USA . 1,824 parts In-Stock

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Kulean Microsystems

USA . 1,231 parts In-Stock

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TANS Electronics

Latvia . 182 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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Overview

Discover the NCV1070STBT3G by Onsemi, a top-quality switching regulator and controller perfect for automotive applications. With its AEC-Q100 screening level and innovative current-mode control mode, this product offers reliable performance in harsh conditions. The compact design and wide operating temperature range make it ideal for space-constrained environments. Trust Onsemi's expertise in automotive technology to deliver a high-performance solution that ensures efficiency and durability. Elevate your projects with the NCV1070STBT3G and experience the benefits of superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the switching regulator, ensuring a long lifespan for the product.

Surface Mount: YES

Ease of installation and space-saving design, making it suitable for compact electronic devices.

Nominal Supply Voltage (Vsup): 8 V

Suitable for various applications requiring a stable 8V power supply.

Maximum Operating Temperature: 125 °C

Can operate reliably in high-temperature environments, making it ideal for automotive applications.

Control Mode: CURRENT-MODE

Provides efficient control and regulation of current output, ensuring stable performance.

Maximum Switching Frequency: 110 kHz

High switching frequency allows for faster response and regulation of output voltage.

Technical Specifications

Switching Regulators & Controllers NCV1070STBT3G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

JESD-30 Code:

R-PDSO-G4

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOT-223

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Current (Isup):

1.3 mA

Nominal Supply Voltage (Vsup):

8 V

Surface Mount:

YES

Switcher Config:

BUCK-BOOST

Maximum Switching Frequency:

110 kHz

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

2.3 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.5 mm

Trade Compliance

NCV1070STBT3G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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