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NCV1071STCT3G

Onsemi

NCV1071STCT3G by Onsemi

NCV1071STCT3G by Onsemi is a switching controller with current-mode control, operating at -40 to 125 °C. It features a max switching frequency of 143 kHz and peak reflow temperature of 260°C. Ideal for automotive applications due to AEC-Q100 screening level and MOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,483 parts In-Stock

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Vyrian

USA . 1,604 parts In-Stock

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TANS Electronics

Latvia . 8,014 parts In-Stock

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SupplyDigital Components

Austria . 7,998 parts In-Stock

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Problanco Electronics

Mexico . 6,748 parts In-Stock

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Kulean Microsystems

USA . 1,366 parts In-Stock

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UHIMA Technologies

Türkiye . 627 parts In-Stock

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Corphita

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Corohmni

South Africa . 347 parts In-Stock

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Overview

Discover the NCV1071STCT3G by Onsemi, a top-of-the-line switching regulator and controller that offers unparalleled quality and reliability. Manufactured by industry leader Onsemi, this product is designed to deliver superior performance in automotive applications. With a compact design and advanced technology, this switching controller ensures efficient power management with minimal supply current. Experience the benefits of precise control and high efficiency with the NCV1071STCT3G, setting new standards in power regulation for automotive electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Highly durable material that can withstand challenging environmental conditions, making this product suitable for automotive applications.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards, saving time and effort during manufacturing.

Screening Level: AEC-Q100

Compliance with Automotive Electronics Council standards ensures reliability and performance in automotive environments.

Nominal Supply Voltage (Vsup): 8 V

Optimal voltage level for efficient power conversion, ensuring stable operation of the switching regulator.

Maximum Operating Temperature: 125 °C

Wide temperature range allows for reliable operation in high-temperature environments, such as automotive engine compartments.

Control Mode: CURRENT-MODE

Current-mode control provides better transient response and stability, improving overall performance of the switching regulator.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable operation in low-temperature environments, making it suitable for automotive and industrial applications.

Maximum Switching Frequency: 143 kHz

High switching frequency allows for efficient power conversion with minimal ripple, improving overall system efficiency.

Terminal Form: GULL WING

Gull wing terminals provide strong solder joints, ensuring reliable connections and improving durability of the product.

Switcher Config: BUCK-BOOST

Versatile buck-boost configuration allows for both step-up and step-down voltage regulation, providing flexibility in various power supply applications.

Technical Specifications

Switching Regulators & Controllers NCV1071STCT3G attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Other IC type:

Control Mode:

CURRENT-MODE

Control Technique:

PULSE WIDTH MODULATION

JESD-30 Code:

R-PDSO-G4

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOT-223

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Current (Isup):

1.3 mA

Nominal Supply Voltage (Vsup):

8 V

Surface Mount:

YES

Switcher Config:

BUCK-BOOST

Maximum Switching Frequency:

143 kHz

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

2.3 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.5 mm

Trade Compliance

NCV1071STCT3G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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