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NCP3488DR2G

Onsemi

NCP3488DR2G by Onsemi

NCP3488DR2G by Onsemi is a MOSFET gate driver with 12V power supply, 13.2V max voltage, and 85 °C operating temp. Ideal for half-bridge based applications, it features small outline packaging and high side driver capability for efficient performance in various electronic systems.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 334 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.235

334

-

$0.317

$0.263

$0.235

Distributors (In-Stock)

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Digiode

USA . 1,218 parts In-Stock

1+ parts

$0.247

100+ parts

-

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1,218

$0.247

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Chip Stock

USA . 51,000 parts In-Stock

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51,000

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Vyrian

USA . 8,430 parts In-Stock

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8,430

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Cyclops Electronics Ltd

UK . 3,645 parts In-Stock

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3,645

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Distributors (Availability)

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Corphita

USA . 1,127 parts In-Stock

1+ parts

$0.234

100+ parts

-

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1,127

$0.234

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Vigor

Singapore . 543 parts In-Stock

1+ parts

$0.250

100+ parts

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543

$0.250

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Corohmni

South Africa . 272 parts In-Stock

1+ parts

$0.260

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272

$0.260

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AZTECH Wire

Italy . 971 parts In-Stock

1+ parts

$10.790

100+ parts

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971

$10.790

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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25,000

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Kulean Microsystems

USA . 7,725 parts In-Stock

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7,725

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Kepictronics

USA . 5,350 parts In-Stock

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5,350

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SupplyDigital Components

Austria . 2,087 parts In-Stock

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2,087

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Infinite Electronics LLP (Excess)

. 2,006 parts In-Stock

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2,006

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Problanco Electronics

Mexico . 1,557 parts In-Stock

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1,557

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Assy Fe

Spain . 1,500 parts In-Stock

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Futuretech Components

Singapore . 690 parts In-Stock

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690

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TANS Electronics

Latvia . 390 parts In-Stock

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390

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Microchip USA

USA . 206 parts In-Stock

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206

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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127

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Overview

Enhance the performance of your electronic devices with the NCP3488DR2G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers high-quality MOSFET Gate Drivers that are perfect for a variety of applications. With its compact design and reliable features, this product offers exceptional value to customers looking to optimize their systems. Experience the benefits of increased efficiency and enhanced functionality with the NCP3488DR2G. Trust Onsemi to provide top-of-the-line solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making this product a reliable choice for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 13.2 V

The high maximum supply voltage allows for compatibility with a wide range of power sources, making this product versatile for different voltage requirements.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for a compact and space-saving design, ideal for applications where board space is limited.

Power Supplies (V): 12

With a nominal supply voltage of 12V, this product is suitable for a wide range of applications requiring standard power input.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliability and stability even in demanding environmental conditions, making this product suitable for industrial applications.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good solderability, ensuring easy and secure connections during assembly.

Width: 3.9 mm

The compact width of 3.9mm allows for easy integration into tight spaces on circuit boards, enabling efficient layout and design flexibility.

High Side Driver: YES

The presence of a high side driver allows for efficient and precise control of high-side power MOSFETs, making this product suitable for power management applications.

Technical Specifications

MOSFET Gate Drivers NCP3488DR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.6 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Trade Compliance

NCP3488DR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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