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NCP303LSN18T1G

Onsemi

NCP303LSN18T1G by Onsemi

NCP303LSN18T1G by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0013mA, and Vth of +1.8V. It is used in automotive applications for power supply support circuits due to its compact size and wide operating temperature range from -40 °C to 125°C.

Median Price

$0.320

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Flip Electronics

USA . 13,434 parts In-Stock

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$0.320

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Cyclops Electronics Ltd

UK . 5,996 parts In-Stock

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Vyrian

USA . 2,113 parts In-Stock

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Digiode

USA . 959 parts In-Stock

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J2 Sourcing AB

Sweden . 200 parts In-Stock

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200

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Semi Source

USA . 72 parts In-Stock

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Vigor

Singapore . 295 parts In-Stock

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$0.150

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295

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Advanced Electronics

New Zealand . 25 parts In-Stock

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$17.696

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$16.103

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$14.511

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25

$17.696

$16.103

$14.511

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AZTECH Wire

Italy . 569 parts In-Stock

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$19.130

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Perfect Parts

USA . 165,791 parts In-Stock

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RC Electronics

USA . 79,856 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,624 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

USA . 4,588 parts In-Stock

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SupplyDigital Components

Austria . 4,398 parts In-Stock

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Kulean Microsystems

USA . 4,331 parts In-Stock

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Problanco Electronics

Mexico . 4,190 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Corphita

USA . 2,141 parts In-Stock

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TANS Electronics

Latvia . 1,018 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 566 parts In-Stock

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Corohmni

South Africa . 167 parts In-Stock

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Overview

Experience superior power management with the NCP303LSN18T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Management ICs that are perfect for a wide range of applications. With a small outline and thin profile package design, this IC offers reliability and efficiency for your electronic devices. Whether you're looking to optimize power supplies or enhance performance, the NCP303LSN18T1G provides the value, benefits, and advantages that customers need. Trust Onsemi for cutting-edge technology and unmatched quality in power management solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the IC.

Surface Mount: YES

Enables easy and efficient PCB assembly process.

Nominal Supply Voltage (Vsup): 1.5 V

Optimal voltage level for efficient power management.

Power Supplies (V): 0.8/10

Versatile power supply range for accommodating different applications.

Maximum Operating Temperature: 125 °C

Ensures stable operation even in high temperature environments.

Technology: CMOS

Utilizes low power consumption CMOS technology for efficient energy management.

Technical Specifications

Power Management ICs NCP303LSN18T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 1.8V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.8V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN18T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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