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NCP303LSN27T1G

Onsemi

NCP303LSN27T1G by Onsemi

NCP303LSN27T1G by Onsemi is a Power Management IC with Vsup of 1.5V, suitable for automotive applications. It features a small outline package style, dual terminal position, and operates b/w -40 to 125 °C. This CMOS technology IC has a max supply current of 0.0013mA and peak reflow temp of 260C.

Median Price

$0.248

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Avnet

USA . 12,000 parts In-Stock

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Rochester

USA . 8,892 parts In-Stock

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$0.257

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$0.214

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$0.190

8,892

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$0.190

Verical

USA . 7,892 parts In-Stock

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$0.238

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$0.238

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.360

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Chip Stock

USA . 230,622 parts In-Stock

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Cyclops Electronics Ltd

UK . 12,088 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

Germany . 2,848 parts In-Stock

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Bristol Electronics

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Dan-Mar Components

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Digiode

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Semtec, LLC

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Microfarads

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Distributors (Availability)

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Corohmni

South Africa . 378 parts In-Stock

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$0.346

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Argo Parts USA

USA . 4,262 parts In-Stock

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$0.360

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$0.349

4,262

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$0.349

Continental Prestige Electronics

USA . 4,032 parts In-Stock

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$0.360

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$0.353

4,032

$0.360

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$0.353

Vigor

Singapore . 815 parts In-Stock

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$0.620

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$0.620

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Semicontronic

India . 869 parts In-Stock

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$6.500

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$6.338

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$6.305

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Ampacity Inc.

Singapore . 1,401 parts In-Stock

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$7.500

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Aztec Data Supply Inc.

USA . 168 parts In-Stock

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AZTECH Wire

Italy . 719 parts In-Stock

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$9.517

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Component Stockers USA

USA . 686 parts In-Stock

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Perfect Parts

USA . 269,155 parts In-Stock

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RC Electronics

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Lixinc

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Infinite Electronics LLP (Excess)

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GreenTree Electronics

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Kulean Microsystems

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SupplyDigital Components

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Futuretech Components

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iodParts Technologies Inc.

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Benley Electronics

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Kepictronics

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Problanco Electronics

Mexico . 2,692 parts In-Stock

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TANS Electronics

Latvia . 2,632 parts In-Stock

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Corphita

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Microchip USA

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Netroflash

USA . 50 parts In-Stock

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UHIMA Technologies

Türkiye . 6 parts In-Stock

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Overview

Enhance your power management solutions with the NCP303LSN27T1G by Onsemi. Crafted with precision and reliability, this Power Management IC offers unparalleled performance in a compact design. Ideal for automotive applications, this innovative product ensures optimal power supply support with a nominal threshold voltage of +2.7V. With a wide operating temperature range and advanced CMOS technology, the NCP303LSN27T1G guarantees efficiency and durability like no other. Elevate your projects with the quality and value that Onsemi provides, setting a new standard in power management ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection for the components inside, making the product durable and reliable.

Surface Mount: YES

The surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and labor costs during manufacturing.

Nominal Supply Voltage (Vsup): 1.5 V

The 1.5V supply voltage is well-suited for many electronic devices and ensures compatibility with a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the power management IC efficient and reliable in operation.

Temperature Grade: AUTOMOTIVE

Being automotive-grade means the power management IC can withstand harsh environmental conditions and is suitable for use in automotive electronics.

Technical Specifications

Power Management ICs NCP303LSN27T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.7V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.7V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN27T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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