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NCP302LSN30T1GH

Onsemi

NCP302LSN30T1GH by Onsemi

NCP302LSN30T1GH by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0012mA, and Vth of +3.0V. Ideal for automotive applications due to its CMOS technology and operating temperature range from -40 to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,423 parts In-Stock

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Vyrian

USA . 873 parts In-Stock

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873

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

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Ampacity Inc.

Singapore . 865 parts In-Stock

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$0.500

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865

$0.500

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Semicontronic

India . 434 parts In-Stock

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$6.500

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$6.338

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$6.305

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434

$6.500

$6.338

$6.305

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Aztec Data Supply Inc.

USA . 3,800 parts In-Stock

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$11.010

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$11.010

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AZTECH Wire

Italy . 563 parts In-Stock

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$14.995

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Problanco Electronics

Mexico . 7,740 parts In-Stock

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Kulean Microsystems

USA . 6,130 parts In-Stock

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Continental Prestige Electronics

USA . 5,213 parts In-Stock

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Advanced Electronics

New Zealand . 4,596 parts In-Stock

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SupplyDigital Components

Austria . 4,251 parts In-Stock

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TANS Electronics

Latvia . 3,767 parts In-Stock

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Argo Parts USA

USA . 3,264 parts In-Stock

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Corphita

USA . 1,427 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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900

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Lucentia Tech

USA . 900 parts In-Stock

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$5.372

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$5.372

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$5.372

900

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$5.372

$5.372

$5.372

Corohmni

South Africa . 136 parts In-Stock

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UHIMA Technologies

Türkiye . 133 parts In-Stock

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Overview

Discover the NCP302LSN30T1GH by Onsemi, a top-quality Power Management IC designed to provide reliable performance in a variety of applications. Manufactured by Onsemi, a trusted leader in the industry, this small outline, thin profile IC offers superior power supply support and seamless integration thanks to its surface mount capability. With a nominal supply voltage of 1.5V and a wide operating temperature range, this automotive-grade technology ensures optimal functionality in any environment. Experience the value and benefits of Onsemi's NCP302LSN30T1GH for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components of the Power Management IC, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable makes it easier to integrate this Power Management IC into a circuit board, saving space and simplifying the assembly process.

Nominal Supply Voltage (Vsup): 1.5 V

The low nominal supply voltage of 1.5 V makes this Power Management IC suitable for applications requiring low power consumption.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this Power Management IC can withstand harsh environmental conditions, making it ideal for automotive applications.

Minimum Operating Temperature: -40 °C

The wide range of minimum operating temperature (-40°C) allows this Power Management IC to function reliably in extreme cold environments.

Technology: CMOS

The CMOS technology used in this Power Management IC ensures low power consumption and high noise immunity, making it efficient and reliable for various applications.

Technical Specifications

Power Management ICs NCP302LSN30T1GH attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Current (Isup):

.0012 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.0V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP302LSN30T1GH Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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