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NCP301LSN45T1G

Onsemi

NCP301LSN45T1G by Onsemi

NCP301LSN45T1G by Onsemi is a Power Management IC with 5 terminals, operating b/w -40 to 125 °C. It supports supply voltages from 0.8V to 10V and has a nominal threshold voltage of +4.5V. Ideal for automotive applications due to its CMOS technology and small outline package style.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 1,742 parts In-Stock

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Nova Conductors

Japan . 65 parts In-Stock

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$0.240

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Chip Stock

USA . 14,430 parts In-Stock

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Vyrian

USA . 3,530 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,368 parts In-Stock

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USA . 1,742 parts In-Stock

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Digiode

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ComSIT Distribution GmbH

Germany . 1,115 parts In-Stock

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ComSIT USA

USA . 1,115 parts In-Stock

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Atlantic Semiconductor

USA . 639 parts In-Stock

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Bristol Electronics

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Corohmni

South Africa . 360 parts In-Stock

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$0.230

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Continental Prestige Electronics

USA . 6,553 parts In-Stock

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$0.240

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$0.235

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Argo Parts USA

USA . 1,680 parts In-Stock

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$0.240

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$0.233

1,680

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.271

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$0.257

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$0.257

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350

$0.271

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$0.257

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Vigor

Singapore . 200 parts In-Stock

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$0.510

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Semicontronic

India . 1,572 parts In-Stock

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$5.500

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$5.362

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$5.335

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Ampacity Inc.

Singapore . 1,617 parts In-Stock

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$7.500

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Aztec Data Supply Inc.

USA . 3,039 parts In-Stock

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$16.530

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AZTECH Wire

Italy . 1,110 parts In-Stock

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$19.260

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Component Stockers USA

USA . 690 parts In-Stock

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$99.990

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Perfect Parts

USA . 242,661 parts In-Stock

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RC Electronics

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Kepictronics

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Futuretech Components

Singapore . 12,000 parts In-Stock

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Lixinc

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

Austria . 4,108 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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TANS Electronics

Latvia . 1,650 parts In-Stock

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iodParts Technologies Inc.

India . 1,115 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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Lucentia Tech

USA . 900 parts In-Stock

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$3.970

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$3.970

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$3.970

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UHIMA Technologies

Türkiye . 624 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.235

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$0.228

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$0.223

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Microchip USA

USA . 148 parts In-Stock

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Overview

Upgrade your power management system with the NCP301LSN45T1G by Onsemi. Crafted with precision and quality, this Power Management IC offers reliable performance in a variety of applications. With its advanced technology and automotive-grade temperature grade, this product ensures optimal function and durability. Experience the benefits of enhanced power supply support circuitry packaged in a compact and efficient design. Trust Onsemi to deliver superior solutions for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable construction, making the product suitable for a variety of applications.

Surface Mount: YES

Allows for easy and efficient mounting onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage (Vsup): 1.5 V

Optimal supply voltage for the power management IC to operate efficiently and reliably.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing overall performance.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of environments and applications.

Technical Specifications

Power Management ICs NCP301LSN45T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 4.5V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.7/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0014 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4.5V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN45T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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