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NB100ELT23LDTR2

Onsemi

NB100ELT23LDTR2 by Onsemi

NB100ELT23LDTR2 by Onsemi is a voltage level translator with 2 functions, operating at 3.3V. It features a max delay of 3.25ns and interfaces as a PECL to TTL translator. Ideal for industrial applications requiring precise signal translation in compact spaces due to its small outline and thin profile package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,351 parts In-Stock

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Vyrian

USA . 2,088 parts In-Stock

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AZTECH Wire

Italy . 1,014 parts In-Stock

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$12.330

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Problanco Electronics

Mexico . 7,675 parts In-Stock

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SupplyDigital Components

Austria . 6,427 parts In-Stock

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TANS Electronics

Latvia . 4,270 parts In-Stock

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Corphita

USA . 2,180 parts In-Stock

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UHIMA Technologies

Türkiye . 574 parts In-Stock

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Kulean Microsystems

USA . 321 parts In-Stock

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Corohmni

South Africa . 307 parts In-Stock

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Microchip USA

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Overview

Unlock the potential of your electronic designs with the NB100ELT23LDTR2 by Onsemi, a top-tier manufacturer known for high-quality components. As a voltage level translator, this versatile product offers seamless integration into a wide range of applications, providing superior performance and reliability. With advanced technology and industrial-grade construction, this compact yet powerful device ensures optimal functionality in any project. Elevate your designs with the NB100ELT23LDTR2 and experience the value of precision engineering at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the voltage level translator.

Maximum Supply Voltage: 3.6 V

Allows for compatibility with a wide range of voltage inputs, increasing flexibility in design applications.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low temperatures, making it suitable for a variety of environments.

Technology: ECL

ECL technology ensures high-speed operation and accurate signal translation between PECL and TTL interfaces.

Technical Specifications

Voltage Level Translators NB100ELT23LDTR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

3.25 ns

Interface IC Type:

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

No. of Bits:

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

NB100ELT23LDTR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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