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MSD601-RT2

Onsemi

MSD601-RT2 by Onsemi

The Onsemi MSD601-RT2 is a NPN BJT transistor with hFE of 210, VCE of 50V, and IC of 0.1A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

21,000

-

$0.030

$0.025

$0.023

DigiKey

USA . 21,000 parts In-Stock

1+ parts

-

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-

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$0.040

21,000

-

-

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$0.040

Verical

USA . 21,000 parts In-Stock

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21,000

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Distributors (In-Stock)

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Digiode

USA . 356 parts In-Stock

1+ parts

$0.024

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356

$0.024

-

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Vyrian

USA . 1,338 parts In-Stock

1+ parts

$0.025

100+ parts

-

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1,338

$0.025

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DigiKey Marketplace

USA . 21,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

-

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$0.030

21,000

-

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$0.030

MISTER SPROCKETS

USA . 12,000 parts In-Stock

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12,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 686 parts In-Stock

1+ parts

$0.022

100+ parts

-

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686

$0.022

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Corohmni

South Africa . 165 parts In-Stock

1+ parts

$0.025

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165

$0.025

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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25,000

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Problanco Electronics

Mexico . 6,697 parts In-Stock

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6,697

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Kulean Microsystems

USA . 5,904 parts In-Stock

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5,904

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SupplyDigital Components

Austria . 2,983 parts In-Stock

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2,983

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TANS Electronics

Latvia . 1,114 parts In-Stock

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1,114

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UHIMA Technologies

Türkiye . 444 parts In-Stock

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444

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Overview

Upgrade your amplifier circuits with the MSD601-RT2 by Onsemi, a high-quality NPN transistor that guarantees superior performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this small signal BJT offers exceptional value with its easy-to-use design and robust construction. Ideal for various applications such as amplifiers, this transistor ensures optimal functionality and efficiency. Trust Onsemi's reputation for excellence and choose the MSD601-RT2 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, ensuring long-term reliability and easy handling.

Polarity or Channel Type: NPN

NPN transistor type allows for easy integration into most electronic circuits, providing flexibility in design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration, making it easier to implement in various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB layout, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular package shape for easy mounting and handling, providing a standardized form factor for compatibility.

Terminal Form: GULL WING

Gull wing terminal form for secure soldering and easy surface mounting on PCBs, ensuring reliable connections.

No. of Terminals: 3

Three terminal design for simplified connection and efficient circuit integration, reducing complexity and improving performance.

Package Style (Meter): SMALL OUTLINE

Small outline package style for space-saving and compact designs, ideal for applications with size constraints.

Minimum DC Current Gain (hFE): 210

High DC current gain ensures amplification of input signals with minimal distortion and improved performance.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating for versatile use in a wide range of voltage applications, providing flexibility and reliability.

Transistor Element Material: SILICON

Silicon material for the transistor element ensures high performance, low power consumption, and reliable operation in various conditions.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows for handling of higher current levels, making it suitable for a wide range of applications requiring amplification.

Terminal Finish: TIN LEAD

Tin lead terminal finish for easy soldering and secure electrical connections, ensuring long-term reliability in the circuit.

Terminal Position: DUAL

Dual terminal position for simplified PCB layout and efficient circuit design, enabling easier connections and enhanced performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD601-RT2 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

210

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD601-RT2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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