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MSD602-RT1

Onsemi

MSD602-RT1 by Onsemi

The Onsemi MSD602-RT1 is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.5A. With a small outline package style and Gull Wing terminal form, it operates at temperatures up to 150 °C.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 75,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

75,000

-

$0.030

$0.025

$0.023

DigiKey

USA . 75,000 parts In-Stock

1+ parts

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$0.040

75,000

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$0.040

Verical

USA . 75,000 parts In-Stock

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75,000

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Digiode

USA . 333 parts In-Stock

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$0.024

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333

$0.024

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Vyrian

USA . 1,784 parts In-Stock

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$0.025

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1,784

$0.025

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DigiKey Marketplace

USA . 75,000 parts In-Stock

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75,000

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Chip Stock

USA . 28,000 parts In-Stock

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A2Z Electronics, Inc.

USA . 21 parts In-Stock

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Corphita

USA . 560 parts In-Stock

1+ parts

$0.022

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560

$0.022

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Corohmni

South Africa . 364 parts In-Stock

1+ parts

$0.025

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364

$0.025

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Component Stockers USA

USA . 107,739 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

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$0.020

107,739

$0.030

$0.020

$0.020

$0.020

Continental Prestige Electronics

USA . 75,000 parts In-Stock

1+ parts

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$0.016

75,000

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$0.016

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kulean Microsystems

USA . 8,136 parts In-Stock

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Problanco Electronics

Mexico . 5,876 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,726 parts In-Stock

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TANS Electronics

Latvia . 5,690 parts In-Stock

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SupplyDigital Components

Austria . 3,662 parts In-Stock

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Assy Fe

Spain . 2,305 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 254 parts In-Stock

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254

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Overview

Enhance your electronic projects with the MSD602-RT1 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled quality and reliability. Perfect for amplifier applications, this NPN transistor boasts a sleek and compact design, making it ideal for a variety of surface mount projects. With a maximum collector-emitter voltage of 50V and a maximum collector current of 0.5A, this transistor delivers exceptional performance while ensuring efficiency and durability. Elevate your projects with the MSD602-RT1 and experience the superior value and benefits that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and ensures ease of use in amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing reliable amplification of signals.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and improving assembly efficiency.

Package Shape: RECTANGULAR

Rectangular shape provides uniformity and compatibility with standard PCB layouts.

Terminal Form: GULL WING

Gull wing terminals offer secure soldering connections, ensuring reliability in circuit operation.

No. of Terminals: 3

Simplified terminal configuration facilitates easy integration into circuit designs.

Maximum Power Dissipation (Abs): 0.2 W

High power dissipation capability ensures reliable performance under demanding conditions.

Package Style (Meter): SMALL OUTLINE

Compact package design saves space on PCBs and enables high-density layouts.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain of 40 ensures consistent and stable amplification performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can withstand voltage spikes and surges.

Transistor Element Material: SILICON

Silicon material offers high conductivity and reliability for long-lasting performance.

Maximum Collector Current (IC): 0.5 A

High collector current rating allows for amplification of moderate power signals.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish ensures good solderability and reliable electrical connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit board layout and connections.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperatures for a specified duration, ensuring robust assembly.

Peak Reflow Temperature °C: 235

Can withstand high peak reflow temperatures during assembly processes, ensuring reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD602-RT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD602-RT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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