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MSD601-ST1

Onsemi

MSD601-ST1 by Onsemi

The Onsemi MSD601-ST1 is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.5V, min hFE of 290, and max IC of 0.1A. With GULL WING terminals and PLASTIC/EPOXY package, it operates up to 150 °C making it suitable for small outline surface mount designs.

Median Price

$0.037

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,975 parts In-Stock

1+ parts

-

100+ parts

$0.037

1k+ parts

$0.030

10k+ parts

$0.027

5,975

-

$0.037

$0.030

$0.027

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 122 parts In-Stock

1+ parts

$0.028

100+ parts

-

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-

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122

$0.028

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Vyrian

USA . 193 parts In-Stock

1+ parts

$0.030

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193

$0.030

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,958 parts In-Stock

1+ parts

$0.027

100+ parts

-

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-

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-

1,958

$0.027

-

-

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Component Stockers USA

USA . 4,852 parts In-Stock

1+ parts

$0.030

100+ parts

$0.030

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$0.030

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-

4,852

$0.030

$0.030

$0.030

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Corohmni

South Africa . 233 parts In-Stock

1+ parts

$0.030

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-

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233

$0.030

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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25,000

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QUARKTWIN TECHNOLOGY LTD

USA . 12,852 parts In-Stock

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12,852

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Kepictronics

USA . 5,050 parts In-Stock

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5,050

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Problanco Electronics

Mexico . 4,494 parts In-Stock

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4,494

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SupplyDigital Components

Austria . 4,405 parts In-Stock

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4,405

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Kulean Microsystems

USA . 3,565 parts In-Stock

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3,565

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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3,000

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TANS Electronics

Latvia . 2,596 parts In-Stock

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2,596

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A-Z Elektronik GmbH

Germany . 1,530 parts In-Stock

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1,530

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Perfect Parts

USA . 1,344 parts In-Stock

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1,344

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UHIMA Technologies

Türkiye . 282 parts In-Stock

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282

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Overview

Discover the reliability and efficiency of the MSD601-ST1 Small Signal Bipolar Junction Transistor by Onsemi. Crafted with precision and expertise, this NPN transistor is perfect for switching applications, offering a maximum VCEsat of just 0.5V. With a minimum DC current gain of 290, this transistor ensures optimal performance in a compact and durable package. Whether you're designing consumer electronics or industrial equipment, the MSD601-ST1 delivers superior quality and performance that will exceed your expectations. Upgrade your projects today with this high-value component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplified design with a single transistor in the package, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast switching speed and low saturation voltage.

Surface Mount: YES

Convenient for automated assembly and space-saving in electronic devices.

Maximum VCEsat: 0.5 V

Low saturation voltage reduces power loss and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Compact and space-efficient package design for easy mounting on circuit boards.

Terminal Form: GULL WING

Allows for secure soldering and connection to the circuit board.

No. of Terminals: 3

Simple three-terminal configuration for easy integration into circuits.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power dissipation, suitable for low to medium power applications.

Package Style (Meter): SMALL OUTLINE

Compact package style for space-saving and efficient circuit board layout.

Maximum Power Dissipation Ambient: 0.2 W

Can dissipate heat efficiently even in ambient conditions, ensuring reliable operation.

Minimum DC Current Gain (hFE): 290

High DC current gain for improved amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer reliable performance and low leakage, ensuring long-term stability.

Maximum Collector Current (IC): 0.1 A

Can handle moderate collector currents, suitable for low to medium power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good solderability and connection reliability.

Terminal Position: DUAL

Dual terminal position for easy mounting and connection in circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for a specified duration, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 235

Peak reflow temperature for proper soldering during assembly, ensuring reliable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD601-ST1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

290

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.5 V

Trade Compliance

MSD601-ST1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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