Loading...

MSD602-RT3

Onsemi

MSD602-RT3 by Onsemi

The Onsemi MSD602-RT3 is a NPN BJT transistor with hFE of 40, VCE of 50V, and IC of 0.5A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 417 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

417

-

-

-

-

Digiode

USA . 61 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

61

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 6,544 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,544

-

-

-

-

TANS Electronics

Latvia . 4,917 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,917

-

-

-

-

Kulean Microsystems

USA . 3,049 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,049

-

-

-

-

Problanco Electronics

Mexico . 893 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

893

-

-

-

-

Corphita

USA . 743 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

743

-

-

-

-

UHIMA Technologies

Türkiye . 599 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

599

-

-

-

-

Corohmni

South Africa . 274 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

274

-

-

-

-

Overview

Unleash the power of innovation with the Onsemi MSD602-RT3, a cutting-edge Small Signal Bipolar Junction Transistor designed for high-performance amplification. Manufactured by industry leader Onsemi, this NPN transistor offers unparalleled quality and reliability. Ideal for a wide range of applications, this transistor is a must-have for electronics enthusiasts and professionals alike. Experience superior performance and efficiency with the MSD602-RT3, where value meets excellence. Discover the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the transistor from external elements, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into a circuit board.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable performance and high-quality amplification.

Surface Mount: YES

Surface mount design allows for easy and secure placement on circuit boards, saving space and facilitating mass production.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage of 50V, this transistor can handle a wide range of voltage requirements in amplification circuits.

Maximum Collector Current (IC): 0.5 A

Capable of handling a maximum current of 0.5A, making it suitable for small to medium amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD602-RT3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD602-RT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19