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MSD602-RT2

Onsemi

MSD602-RT2 by Onsemi

The Onsemi MSD602-RT2 is a NPN BJT transistor with hFE of 210, VCE of 50V, and IC of 0.5A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 42,000 parts In-Stock

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Vyrian

USA . 1,180 parts In-Stock

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1,180

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Digiode

USA . 865 parts In-Stock

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865

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Problanco Electronics

Mexico . 8,285 parts In-Stock

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8,285

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A-Z Elektronik GmbH

Germany . 5,787 parts In-Stock

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5,787

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SupplyDigital Components

Austria . 4,342 parts In-Stock

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Corphita

USA . 2,037 parts In-Stock

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2,037

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TANS Electronics

Latvia . 1,553 parts In-Stock

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Kulean Microsystems

USA . 1,142 parts In-Stock

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UHIMA Technologies

Türkiye . 970 parts In-Stock

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Corohmni

South Africa . 479 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the MSD602-RT2 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for amplifier applications, providing seamless integration and superior functionality. With its Gull Wing terminal form and compact package style, this transistor is easy to install and use in various projects. Trust Onsemi's reputation for excellence and choose the MSD602-RT2 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, indicating that this transistor is ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic devices.

Package Shape: RECTANGULAR

Rectangular shape enables compact placement on the circuit board, maximizing space efficiency.

Terminal Form: GULL WING

Gull wing terminals offer reliable connections and ease of soldering during assembly, enhancing the overall reliability of the transistor.

No. of Terminals: 3

Three terminals provide the necessary connections for basic transistor operation while keeping the design simple and straightforward.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves PCB space without compromising the performance of the transistor.

Minimum DC Current Gain (hFE): 210

High minimum DC current gain ensures consistent and stable amplification of signals within the specified range.

Maximum Collector-Emitter Voltage: 50 V

50V maximum collector-emitter voltage offers flexibility in voltage requirements for different applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability, ideal for demanding amplifier applications.

Maximum Collector Current (IC): 0.5 A

0.5A maximum collector current allows the transistor to handle moderate power levels, suitable for various amplifier designs.

Terminal Position: DUAL

Dual terminal position allows for easy installation and connection in the circuit, enhancing usability and convenience.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD602-RT2 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

210

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD602-RT2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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