Loading...

MSD602-RT1G

Onsemi

MSD602-RT1G by Onsemi

The Onsemi MSD602-RT1G is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.2W, hFE of 40, and max collector-emitter voltage of 50V. With surface mount capability and operating temp up to 150°C, it's ideal for compact electronic designs.

Median Price

$0.049

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

1k+ parts

$0.022

10k+ parts

-

3,000

$0.026

$0.025

$0.022

-

Chip1Stop

Japan . 9 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

-

10k+ parts

-

9

$0.134

-

-

-

Mouser Electronics

USA . 14,390 parts In-Stock

1+ parts

$0.180

100+ parts

$0.069

1k+ parts

$0.044

10k+ parts

$0.034

14,390

$0.180

$0.069

$0.044

$0.034

DigiKey

USA . 13,364 parts In-Stock

1+ parts

$0.180

100+ parts

$0.069

1k+ parts

$0.044

10k+ parts

-

13,364

$0.180

$0.069

$0.044

-

Newark

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.036

45,000

-

-

-

$0.036

EBV Elektronik

Germany . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

36,000

-

-

-

-

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.027

30,000

-

-

-

$0.027

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.024

3,000

-

-

-

$0.024

Flip Electronics (Authorized)

USA . 2,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,690

-

-

-

-

Arrow

USA . 9 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.038

10k+ parts

$0.028

9

-

$0.062

$0.038

$0.028

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,093 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

2,093

$0.025

-

-

-

Nova Conductors

Japan . 91 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

91

$0.039

-

-

-

Chip Stock

USA . 79,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

79,000

-

-

-

-

Semtec, LLC

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66,000

-

-

-

-

Vyrian

USA . 9,809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,809

-

-

-

-

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.037

3,000

-

-

-

$0.037

Flip Electronics

USA . 2,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,690

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 9,670 parts In-Stock

1+ parts

$0.017

100+ parts

-

1k+ parts

-

10k+ parts

-

9,670

$0.017

-

-

-

Corohmni

South Africa . 473 parts In-Stock

1+ parts

$0.019

100+ parts

-

1k+ parts

-

10k+ parts

-

473

$0.019

-

-

-

Corphita

USA . 1,700 parts In-Stock

1+ parts

$0.023

100+ parts

-

1k+ parts

-

10k+ parts

-

1,700

$0.023

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.039

-

-

-

Perfect Parts

USA . 56,253 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,253

-

-

-

-

Kepictronics

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,000

-

-

-

-

Continental Prestige Electronics

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.020

24,000

-

-

-

$0.020

Lixinc

USA . 11,884 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,884

-

-

-

-

iodParts Technologies Inc.

India . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

S.R.D Solutions

India . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 5,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,145

-

-

-

-

SupplyDigital Components

Austria . 4,682 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,682

-

-

-

-

Kulean Microsystems

USA . 4,531 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,531

-

-

-

-

TANS Electronics

Latvia . 4,094 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,094

-

-

-

-

GreenTree Electronics

Israel . 2,358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,358

-

-

-

-

Authorized Procurement Solutions

USA . 2,258 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,258

-

-

-

-

UHIMA Technologies

Türkiye . 537 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

537

-

-

-

-

Problanco Electronics

Mexico . 449 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

449

-

-

-

-

Overview

Experience the superior quality and reliability of Onsemi with the MSD602-RT1G Small Signal Bipolar Junction Transistor. This NPN transistor offers unmatched performance in amplifier applications, providing customers with exceptional value and benefits. With a maximum power dissipation of 0.2 W and a maximum collector-emitter voltage of 50 V, this transistor is perfect for a wide range of electronic projects. Trust Onsemi for cutting-edge technology and unparalleled results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, ensuring reliable performance.

Configuration: SINGLE

Simplified design with a single configuration for easy installation and application.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, making it ideal for audio and signal processing applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts.

Terminal Form: GULL WING

Gull wing terminals ensure secure connection and mechanical stability.

Maximum Power Dissipation (Abs): 0.2 W

High power dissipation capability for reliable and continuous operation.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving design for efficiency in PCB layout and integration.

Minimum DC Current Gain (hFE): 40

Consistent and reliable current gain for stable amplification performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in different environments.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.5 A

High collector current rating for demanding amplification requirements.

Terminal Finish: MATTE TIN

Matte tin finish for improved solderability and long-term reliability.

Terminal Position: DUAL

Dual terminal position for flexible and secure connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for quick and efficient reflow soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable solder joint formation and durability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD602-RT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD602-RT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19