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MC74VHC1GT32DF1G

Onsemi

MC74VHC1GT32DF1G by Onsemi

MC74VHC1GT32DF1G by Onsemi is a logic gate with 2 inputs, 10 ns propagation delay, and 15.5 ns tpd. It operates at 3.3/5 V supplies, suitable for military-grade applications due to its -55 to 125 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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AZTECH Wire

Italy . 409 parts In-Stock

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Kulean Microsystems

USA . 7,546 parts In-Stock

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SupplyDigital Components

Austria . 7,380 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,912 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 1,523 parts In-Stock

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UHIMA Technologies

Türkiye . 946 parts In-Stock

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Overview

Experience the power of innovation with the MC74VHC1GT32DF1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality logic gates that guarantee exceptional performance and reliability. Ideal for a wide range of applications, this product offers seamless integration, fast propagation delay, and a compact design. With a nominal supply voltage of 3.3V and a maximum operating temperature of 125 °C, Onsemi's MC74VHC1GT32DF1G is the perfect solution for your electronic projects. Upgrade your systems today with the best in class technology from Onsemi.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 10 ns

Low propagation delay ensures fast response time and efficient performance.

No. of Inputs: 2

Suitable for basic logic operations which require two input signals.

Nominal Supply Voltage / Vsup (V): 3.3

Works efficiently at a standard voltage level, making it compatible with many circuits.

Maximum Operating Temperature: 125 °C

Capable of operating under high temperature conditions, improving versatility.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Logic Gates MC74VHC1GT32DF1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

15.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

MC74VHC1GT32DF1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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