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MC74VHC1GT04MU1TCG

Onsemi

MC74VHC1GT04MU1TCG by Onsemi

MC74VHC1GT04MU1TCG by Onsemi is a CMOS Logic Gate with 3V nominal voltage, 14.5ns propagation delay, and 50mA max power supply current. Ideal for military applications due to its MILITARY temperature grade and small outline package style.

Median Price

$0.190

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,700 parts In-Stock

1+ parts

$0.190

100+ parts

$0.097

1k+ parts

$0.080

10k+ parts

$0.071

2,700

$0.190

$0.097

$0.080

$0.071

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 186,000 parts In-Stock

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Vyrian

USA . 7,113 parts In-Stock

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Digiode

USA . 561 parts In-Stock

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561

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Distributors (Availability)

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Microchip USA

USA . 166 parts In-Stock

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$2.459

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166

$2.459

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AZTECH Wire

Italy . 954 parts In-Stock

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$17.830

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954

$17.830

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Problanco Electronics

Mexico . 6,640 parts In-Stock

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TANS Electronics

Latvia . 5,774 parts In-Stock

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SupplyDigital Components

Austria . 5,699 parts In-Stock

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5,699

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Kulean Microsystems

USA . 3,276 parts In-Stock

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Corphita

USA . 2,140 parts In-Stock

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Corohmni

South Africa . 464 parts In-Stock

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UHIMA Technologies

Türkiye . 401 parts In-Stock

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401

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Overview

Enhance your electronic projects with the MC74VHC1GT04MU1TCG by Onsemi! As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This logic gate is perfect for various applications, offering high performance and efficiency. With a small outline and very thin profile package style, this product provides value by delivering fast propagation delay and low power consumption. Trust Onsemi to deliver cutting-edge technology that meets your needs, giving you a competitive edge in the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can withstand various environmental conditions, making the product reliable.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level, making it compatible with a wide range of circuits and systems.

Propagation Delay (tpd): 14.5 ns

Fast propagation delay ensures quick signal processing, improving overall system performance.

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments without compromising its functionality.

Minimum Operating Temperature: -55 °C

Can also operate in low temperature conditions, providing versatility in various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Logic Gates MC74VHC1GT04MU1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

14.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

MC74VHC1GT04MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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