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MC74VHC1G50DFT2

Onsemi

MC74VHC1G50DFT2 by Onsemi

MC74VHC1G50DFT2 by Onsemi is a CMOS Logic Gate with 10ns Propagation Delay, 3.3V Nominal Voltage, and 50pF Load Capacitance. It is used in military-grade applications due to its -55 to 125 °C operating temperature range and small outline package design for space-constrained environments.

Median Price

$0.350

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Master Electronics

USA . 2,975 parts In-Stock

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$0.340

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$0.220

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$0.180

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Verical

USA . 2,952 parts In-Stock

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$0.361

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$0.279

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$0.279

Distributors (In-Stock)

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Digiode

USA . 1,378 parts In-Stock

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$0.456

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Cyclops Electronics Ltd

UK . 21,340 parts In-Stock

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Vyrian

USA . 7,732 parts In-Stock

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Contempo Components LLC

USA . 2,097 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 896 parts In-Stock

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$0.432

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Component Stockers USA

USA . 2,318 parts In-Stock

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$0.470

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$0.210

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$0.120

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Corohmni

South Africa . 346 parts In-Stock

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$0.480

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$0.480

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AZTECH Wire

Italy . 640 parts In-Stock

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$17.240

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Kepictronics

USA . 21,340 parts In-Stock

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Kulean Microsystems

USA . 7,529 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,666 parts In-Stock

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TANS Electronics

Latvia . 5,621 parts In-Stock

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SupplyDigital Components

Austria . 4,161 parts In-Stock

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Problanco Electronics

Mexico . 1,204 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 330 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MC74VHC1G50DFT2 logic gate from Onsemi. Known for their reliable manufacturing, Onsemi delivers top-notch components that guarantee optimal performance. This versatile logic gate is perfect for a wide range of applications, offering fast propagation delay and low power consumption. Upgrade your circuits with the MC74VHC1G50DFT2 and experience the value of efficiency and precision in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for various environments.

Propagation Delay At Nominal Supply: 10 ns

Fast propagation delay ensures efficient performance in time-critical applications.

Surface Mount: YES

Ease of installation and compact design for space-saving applications.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage to ensure stable operation and power efficiency.

Load Capacitance (CL): 50 pF

Suitable for driving moderate loads while maintaining signal integrity.

Maximum Operating Temperature: 125 °C

Wide temperature range allows for reliability in various operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for improved performance.

Technical Specifications

Logic Gates MC74VHC1G50DFT2 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

MC74VHC1G50DFT2 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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