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MC74VHC1G14MU2TCG

Onsemi

MC74VHC1G14MU2TCG by Onsemi

MC74VHC1G14MU2TCG by Onsemi is a CMOS Logic Gate with Schmitt Trigger. It operates at 3V, has 6 terminals, and a propagation delay of 20.5ns. Suitable for military-grade applications due to its wide temperature range and low power consumption.

Median Price

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Lifecycle Status

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AZTECH Wire

Italy . 771 parts In-Stock

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TANS Electronics

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SupplyDigital Components

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Microchip USA

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Overview

Unlock the power of seamless logic gates with the MC74VHC1G14MU2TCG by Onsemi. Crafted with precision and quality, this small outline, very thin profile package offers unparalleled performance in a wide range of applications. From industrial to military-grade projects, this CMOS technology-based device ensures reliability and efficiency. With a maximum operating temperature of 125 °C and Schmitt Trigger feature, customers can trust in the durability and functionality of this product. Experience enhanced signal processing with fast propagation delay of 20.5 ns and a nominal supply voltage of 3V. Elevate your projects with the MC74VHC1G14MU2TCG and discover the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside the logic gates, ensuring a long lifespan.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level, making it compatible with a wide range of electronic devices.

Propagation Delay (tpd): 20.5 ns

Provides a quick response time for signal processing, improving overall efficiency of the logic gates.

Schmitt Trigger: YES

Helps to eliminate noise and provide stable output signals, ensuring reliable performance in various applications.

Technology: CMOS

Utilizes low power consumption and provides high noise immunity, making it energy-efficient and reliable for long-term use.

Technical Specifications

Logic Gates MC74VHC1G14MU2TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-N6

Length:

1.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

20.5 ns

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

MC74VHC1G14MU2TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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