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FGP3440G2-F085

Onsemi

FGP3440G2-F085 by Onsemi

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 26.9 A; Maximum Gate-Emitter Voltage: 12 V; Maximum Collector-Emitter Voltage: 390 V;

Median Price

$3.880

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 350 parts In-Stock

1+ parts

$3.611

100+ parts

$2.030

1k+ parts

-

10k+ parts

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350

$3.611

$2.030

-

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Farnell

UK . 305 parts In-Stock

1+ parts

$3.880

100+ parts

$1.650

1k+ parts

$1.460

10k+ parts

-

305

$3.880

$1.650

$1.460

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Mouser Electronics

USA . 1,614 parts In-Stock

1+ parts

$4.760

100+ parts

-

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-

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1,614

$4.760

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DigiKey

USA . 869 parts In-Stock

1+ parts

$4.760

100+ parts

$2.238

1k+ parts

$1.724

10k+ parts

$1.712

869

$4.760

$2.238

$1.724

$1.712

Newark

USA . 304 parts In-Stock

1+ parts

$4.830

100+ parts

$1.820

1k+ parts

-

10k+ parts

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304

$4.830

$1.820

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Element14

Singapore . 305 parts In-Stock

1+ parts

$6.790

100+ parts

$2.570

1k+ parts

$2.500

10k+ parts

-

305

$6.790

$2.570

$2.500

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Arrow

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$2.091

1k+ parts

$1.740

10k+ parts

-

300

-

$2.091

$1.740

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Verical

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$2.091

1k+ parts

$1.740

10k+ parts

-

300

-

$2.091

$1.740

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Rochester

USA . 17 parts In-Stock

1+ parts

-

100+ parts

$1.230

1k+ parts

$1.020

10k+ parts

$0.910

17

-

$1.230

$1.020

$0.910

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,817 parts In-Stock

1+ parts

$0.960

100+ parts

-

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2,817

$0.960

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Vyrian

USA . 1,918 parts In-Stock

1+ parts

$1.010

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1,918

$1.010

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NAC Semi

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

$4.470

1k+ parts

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10k+ parts

$4.030

1,400

-

$4.470

-

$4.030

Nova Conductors

Japan . 400 parts In-Stock

1+ parts

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400

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ACDS - Activité Composants Distribution Service

France . 380 parts In-Stock

1+ parts

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380

-

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Bristol Electronics

USA . 380 parts In-Stock

1+ parts

-

100+ parts

$1.259

1k+ parts

$1.169

10k+ parts

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380

-

$1.259

$1.169

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Dan-Mar Components

USA . 380 parts In-Stock

1+ parts

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380

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Flip Electronics

USA . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 667 parts In-Stock

1+ parts

$0.860

100+ parts

-

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667

$0.860

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Corphita

USA . 1,937 parts In-Stock

1+ parts

$0.909

100+ parts

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10k+ parts

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1,937

$0.909

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.271

100+ parts

$1.157

1k+ parts

$1.042

10k+ parts

-

100

$1.271

$1.157

$1.042

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Corohmni

South Africa . 271 parts In-Stock

1+ parts

$1.584

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271

$1.584

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Continental Prestige Electronics

USA . 12 parts In-Stock

1+ parts

$2.670

100+ parts

$1.670

1k+ parts

$1.340

10k+ parts

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12

$2.670

$1.670

$1.340

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Microchip USA

USA . 4,193 parts In-Stock

1+ parts

$19.890

100+ parts

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4,193

$19.890

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Problanco Electronics

Mexico . 6,904 parts In-Stock

1+ parts

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6,904

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SupplyDigital Components

Austria . 6,686 parts In-Stock

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6,686

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A-Z Elektronik GmbH

Germany . 5,637 parts In-Stock

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5,637

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Alle Elektronik GmbH

Germany . 3,758 parts In-Stock

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3,758

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Kulean Microsystems

USA . 2,518 parts In-Stock

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2,518

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Netroflash

USA . 2,000 parts In-Stock

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2,000

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TANS Electronics

Latvia . 1,677 parts In-Stock

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1,677

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Supply Digital

USA . 1,113 parts In-Stock

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1,113

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UHIMA Technologies

Türkiye . 513 parts In-Stock

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513

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iodParts Technologies Inc.

India . 250 parts In-Stock

1+ parts

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250

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGP3440G2-F085 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

390 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.2 V

Maximum Gate-Emitter Voltage:

12 V

JESD-609 Code:

e3

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FGP3440G2-F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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