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CS8190EDWF20

Onsemi

CS8190EDWF20 by Onsemi

CS8190EDWF20 by Onsemi is a 20-terminal peripheral driver with max supply voltage of 16V and min of 8.5V. It offers overvoltage protection, operates b/w -40 to 85 °C, and has a nominal output peak current limit of 0.01A. Ideal for industrial applications requiring buffer or inverter based peripheral drivers.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,388 parts In-Stock

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Vyrian

USA . 613 parts In-Stock

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613

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Distributors (Availability)

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Native Components

USA . 255 parts In-Stock

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$0.382

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$0.366

255

$0.382

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$0.366

Northwest PG Solutions

USA . 1,087 parts In-Stock

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$0.420

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$0.370

1,087

$0.420

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$0.370

QUARKTWIN TECHNOLOGY LTD

USA . 7,516 parts In-Stock

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7,516

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TANS Electronics

Latvia . 6,517 parts In-Stock

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SupplyDigital Components

Austria . 4,214 parts In-Stock

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Problanco Electronics

Mexico . 2,011 parts In-Stock

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Corphita

USA . 1,870 parts In-Stock

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Kulean Microsystems

USA . 884 parts In-Stock

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Microchip USA

USA . 328 parts In-Stock

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Corohmni

South Africa . 101 parts In-Stock

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UHIMA Technologies

Türkiye . 22 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the CS8190EDWF20 by Onsemi. Crafted with precision and expertise, this peripheral driver offers unparalleled quality and reliability. From over voltage protection to a wide operating temperature range, this product ensures peak performance in any application. Experience seamless integration and enhanced efficiency with its compact design and dual-terminal position. Elevate your projects with the value and benefits that only Onsemi can deliver. Choose the CS8190EDWF20 for superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and ensures the components inside are protected from external damage.

Surface Mount: YES

Surface mount capability makes it easy to integrate this peripheral driver into a variety of electronic devices without the need for through-hole mounting.

Maximum Supply Voltage: 16 V

With a high maximum supply voltage of 16V, this peripheral driver can handle a wide range of input voltages, making it versatile for different applications.

Built-in Protections: OVER VOLTAGE

The built-in overvoltage protection ensures that the peripheral driver is safeguarded against voltage spikes, enhancing the reliability of the device it is used in.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in demanding industrial environments.

Width: 7.5 mm

Compact width of 7.5mm makes this peripheral driver suitable for space-constrained applications where size is a critical factor.

Nominal Supply Voltage: 13.1 V

The nominal supply voltage of 13.1V provides a stable operating voltage for the peripheral driver, ensuring consistent performance.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

The interface IC type of buffer or inverter based peripheral driver allows for seamless integration with a variety of systems and devices, enhancing compatibility.

Output Current Flow Direction: SOURCE AND SINK

The ability to source and sink current in the output direction makes this peripheral driver versatile for different types of circuit configurations, providing flexibility in design.

Technical Specifications

Peripheral Drivers CS8190EDWF20 attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

OVER VOLTAGE

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e0

Length:

12.8 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Nominal Output Peak Current Limit:

.01 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

16 V

Minimum Supply Voltage:

8.5 V

Nominal Supply Voltage:

13.1 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

CS8190EDWF20 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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