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CS8190ENF16G

Onsemi

CS8190ENF16G by Onsemi

CS8190ENF16G by Onsemi is a 16-terminal peripheral driver with a supply voltage range of 8.5V to 16V. It offers overvoltage protection, operates in industrial temperatures (-40 °C to 85°C), and has a nominal output peak current limit of 0.01A. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink output current flow direction.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,890 parts In-Stock

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LWI Electronics Inc

India . 1,490 parts In-Stock

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Digiode

USA . 697 parts In-Stock

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Native Components

USA . 89 parts In-Stock

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$6.847

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AZTECH Wire

Italy . 574 parts In-Stock

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$19.080

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Component Stockers USA

USA . 478 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 9,180 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 4,230 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,832 parts In-Stock

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Kulean Microsystems

USA . 3,687 parts In-Stock

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Kepictronics

USA . 2,375 parts In-Stock

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Metaverse IC Inc.

Canada . 1,820 parts In-Stock

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TANS Electronics

Latvia . 1,598 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 709 parts In-Stock

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UHIMA Technologies

Türkiye . 636 parts In-Stock

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Infinite Electronics LLP (Excess)

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Corohmni

South Africa . 410 parts In-Stock

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Microchip USA

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Northwest PG Solutions

USA . 239 parts In-Stock

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Overview

Experience the reliability and performance of the CS8190ENF16G by Onsemi, a top-tier manufacturer in the industry. Perfect for various applications in the category of Peripheral Drivers, this product offers unmatched quality and built-in protections against overvoltage. With a wide operating temperature range and durable construction, customers can trust in the value and benefits that this product provides. Enhance your projects with the superior advantages of the CS8190ENF16G and elevate your results today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This ensures durability and reliability of the product, making it suitable for long-term usage.

Maximum Supply Voltage: 16 V

Can handle high voltage inputs, providing safety and protection for connected devices.

Built-in Protections: OVER VOLTAGE

Provides additional safety measure by protecting against over voltage situations.

Maximum Operating Temperature: 85 °C

Can operate in high temperature environments without any issues, increasing its versatility.

Minimum Operating Temperature: -40 °C

Can withstand low temperatures, making it suitable for a wide range of environmental conditions.

Nominal Supply Voltage: 13.1 V

Provides a steady supply of power to connected devices, ensuring smooth operation.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

Enables seamless communication between the peripheral driver and other devices, enhancing compatibility.

Output Current Flow Direction: SINK

Allows for efficient current flow in the specified direction, improving overall performance.

Technical Specifications

Peripheral Drivers CS8190ENF16G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

OVER VOLTAGE

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e3

Length:

19.175 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SINK

Nominal Output Peak Current Limit:

.01 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

4.44 mm

Maximum Supply Voltage:

16 V

Minimum Supply Voltage:

8.5 V

Nominal Supply Voltage:

13.1 V

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

CS8190ENF16G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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