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CS4121EDWFR20G

Onsemi

CS4121EDWFR20G by Onsemi

CS4121EDWFR20G by Onsemi is a 20-terminal peripheral driver with max supply voltage of 16V. It offers overvoltage protection, operates b/w -40 to 85 °C, and has a nominal output peak current limit of 0.01A. Ideal for industrial applications requiring buffer or inverter-based interface ICs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,639 parts In-Stock

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1,639

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Digiode

USA . 185 parts In-Stock

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185

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Distributors (Availability)

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Native Components

USA . 744 parts In-Stock

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$0.770

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744

$0.770

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Northwest PG Solutions

USA . 1,158 parts In-Stock

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$0.847

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SupplyDigital Components

Austria . 5,750 parts In-Stock

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5,750

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QUARKTWIN TECHNOLOGY LTD

USA . 3,630 parts In-Stock

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3,630

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Kulean Microsystems

USA . 3,614 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Problanco Electronics

Mexico . 1,468 parts In-Stock

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Corphita

USA . 1,446 parts In-Stock

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TANS Electronics

Latvia . 929 parts In-Stock

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Microchip USA

USA . 498 parts In-Stock

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Corohmni

South Africa . 284 parts In-Stock

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UHIMA Technologies

Türkiye . 97 parts In-Stock

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Overview

Enhance your electronic designs with the CS4121EDWFR20G by Onsemi, a top-tier manufacturer known for delivering high-quality components. This peripheral driver offers unmatched reliability and efficiency, making it ideal for a wide range of applications. From overvoltage protection to dual terminal positions, this product is designed to exceed expectations. Elevate your projects with the value, benefits, and advantages that only Onsemi can provide. Trust in the CS4121EDWFR20G to deliver exceptional performance and reliability every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection for the peripheral driver, ensuring a longer lifespan.

Maximum Supply Voltage: 16 V

Can handle higher voltage levels, making it suitable for a wide range of applications.

Built-in Protections: OVER VOLTAGE

Provides added protection for the peripheral driver and connected devices in case of voltage spikes.

Maximum Operating Temperature: 85 °C

Can operate efficiently in high temperature environments, increasing its versatility.

Minimum Operating Temperature: -40 °C

Can operate in extremely low temperature conditions, ensuring reliability in various environments.

Nominal Output Peak Current Limit: 0.01 A

Limits the peak output current to prevent damage to the peripheral driver and connected devices.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

Offers flexibility in interfacing with different types of devices, enhancing compatibility.

Technical Specifications

Peripheral Drivers CS4121EDWFR20G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

OVER VOLTAGE

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e3

Length:

12.8 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Nominal Output Peak Current Limit:

.01 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

16 V

Minimum Supply Voltage:

8 V

Nominal Supply Voltage:

13.1 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

CS4121EDWFR20G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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