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CS4192XDWF16G

Onsemi

CS4192XDWF16G by Onsemi

CS4192XDWF16G by Onsemi is a 16-terminal peripheral driver with built-in protections for over current and thermal issues. It operates b/w -40 to 105 °C, with a max supply voltage of 14 V. Ideal for industrial applications requiring a half bridge based peripheral driver with source and sink output current flow direction.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,740 parts In-Stock

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Vyrian

USA . 1,154 parts In-Stock

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SupplyDigital Components

Austria . 5,511 parts In-Stock

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Kulean Microsystems

USA . 4,824 parts In-Stock

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TANS Electronics

Latvia . 4,493 parts In-Stock

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Microchip USA

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Problanco Electronics

Mexico . 3,983 parts In-Stock

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Metaverse IC Inc.

Canada . 3,916 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,612 parts In-Stock

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Northwest PG Solutions

USA . 1,914 parts In-Stock

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Corphita

USA . 1,805 parts In-Stock

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Native Components

USA . 934 parts In-Stock

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UHIMA Technologies

Türkiye . 672 parts In-Stock

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Corohmni

South Africa . 172 parts In-Stock

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Overview

Enhance your electronic designs with the CS4192XDWF16G by Onsemi, a top-of-the-line peripheral driver that boasts exceptional quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers built-in protections against over current and thermal issues, ensuring optimal performance and longevity. Ideal for a variety of applications, the CS4192XDWF16G provides customers with a valuable solution that delivers unparalleled benefits and advantages. Trust Onsemi to deliver excellence with every product, and elevate your projects to new heights with the CS4192XDWF16G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the peripheral driver, making it a reliable choice for various applications.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this peripheral driver is suitable for low power applications while providing efficient performance.

Built-in Protections: OVER CURRENT; THERMAL

The built-in protections for over current and thermal ensures the safety and reliability of the connected components, making it a secure choice for applications where these protections are crucial.

Temperature Grade: INDUSTRIAL

The industrial temperature grade allows the peripheral driver to operate efficiently in a wide range of temperatures, making it suitable for industrial applications where temperature fluctuations are common.

Output Current Flow Direction: SOURCE AND SINK

The ability to provide both source and sink current flow direction offers flexibility in connecting and controlling various devices, making it a versatile choice for different applications.

Technical Specifications

Peripheral Drivers CS4192XDWF16G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

OVER CURRENT; THERMAL

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,7.5/14

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

14 V

Minimum Supply Voltage-1:

7.5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

CS4192XDWF16G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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