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2SD1805G-TL-E

Onsemi

2SD1805G-TL-E by Onsemi

Onsemi's 2SD1805G-TL-E is a NPN BJT with max. power dissipation of 15W, hFE of 280, and max. collector current of 5A. Ideal for surface mount applications in electronics due to its single configuration and temp. range up to 150°C.

Median Price

$0.306

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 74,560 parts In-Stock

1+ parts

-

100+ parts

$0.289

1k+ parts

$0.240

10k+ parts

$0.214

74,560

-

$0.289

$0.240

$0.214

DigiKey

USA . 74,560 parts In-Stock

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-

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$0.360

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74,560

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-

$0.360

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Verical

USA . 33,600 parts In-Stock

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$0.267

33,600

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$0.267

Mouser Electronics

USA . 1,506 parts In-Stock

1+ parts

-

100+ parts

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$0.324

10k+ parts

$0.234

1,506

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-

$0.324

$0.234

Chip1Stop

Japan . 5 parts In-Stock

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5

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Distributors (In-Stock)

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Digiode

USA . 1,755 parts In-Stock

1+ parts

$0.226

100+ parts

-

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1,755

$0.226

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-

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Vyrian

USA . 869 parts In-Stock

1+ parts

$0.238

100+ parts

-

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869

$0.238

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Chip Stock

USA . 76,000 parts In-Stock

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76,000

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Distributors (Availability)

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Native Components

USA . 910 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

910

$0.043

-

-

$0.041

Corphita

USA . 223 parts In-Stock

1+ parts

$0.214

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-

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223

$0.214

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Corohmni

South Africa . 447 parts In-Stock

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$0.231

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447

$0.231

-

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Component Stockers USA

USA . 773 parts In-Stock

1+ parts

$0.240

100+ parts

$0.230

1k+ parts

$0.210

10k+ parts

$0.210

773

$0.240

$0.230

$0.210

$0.210

QUARKTWIN TECHNOLOGY LTD

USA . 23,085 parts In-Stock

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23,085

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TANS Electronics

Latvia . 7,577 parts In-Stock

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7,577

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Problanco Electronics

Mexico . 6,434 parts In-Stock

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6,434

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Metaverse IC Inc.

Canada . 4,100 parts In-Stock

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Kulean Microsystems

USA . 2,371 parts In-Stock

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2,371

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Perfect Parts

USA . 2,346 parts In-Stock

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2,346

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Northwest PG Solutions

USA . 2,198 parts In-Stock

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2,198

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UHIMA Technologies

Türkiye . 882 parts In-Stock

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882

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SupplyDigital Components

Austria . 875 parts In-Stock

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875

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Continental Prestige Electronics

USA . 736 parts In-Stock

1+ parts

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100+ parts

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$0.215

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736

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$0.215

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Overview

Enhance the performance of your electronic devices with the 2SD1805G-TL-E NPN bipolar junction transistor by Onsemi. Known for their superior quality and reliability, Onsemi transistors are designed to deliver precision and efficiency in a variety of applications. Whether you're working on amplifiers, power supplies, or LED drivers, this small signal BJT offers a maximum power dissipation of 15W and a minimum DC current gain of 280, ensuring optimal performance. Trust Onsemi to provide top-notch products that bring value and benefits to your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and allow for easy configuration in various applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into electronic devices.

Surface Mount: YES

Surface mount capability allows for efficient and compact placement on PCBs, saving space and reducing overall size of the electronic system.

Maximum Power Dissipation (Abs): 15 W

High maximum power dissipation allows for the transistor to handle larger loads and operate reliably in demanding conditions.

Minimum DC Current Gain (hFE): 280

High minimum DC current gain ensures that the transistor provides consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance enables the transistor to withstand elevated temperatures without compromising performance or reliability.

Maximum Collector Current (IC): 5 A

High maximum collector current rating allows the transistor to handle higher current loads, making it suitable for a wide range of applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and ensures stable connections for improved reliability in circuit construction.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1805G-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

280

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Trade Compliance

2SD1805G-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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