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2SD1802T-E

Onsemi

2SD1802T-E by Onsemi

The Onsemi 2SD1802T-E is a NPN BJT with max power dissipation of 15W, min hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and high operating temperature of 150°C.

Median Price

$0.357

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 441 parts In-Stock

1+ parts

$0.800

100+ parts

$0.478

1k+ parts

$0.339

10k+ parts

$0.275

441

$0.800

$0.478

$0.339

$0.275

Rochester

USA . 72,980 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.296

10k+ parts

$0.264

72,980

-

$0.357

$0.296

$0.264

DigiKey

USA . 11,767 parts In-Stock

1+ parts

-

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$0.230

11,767

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$0.230

Flip Electronics (Authorized)

USA . 11,767 parts In-Stock

1+ parts

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11,767

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Distributors (In-Stock)

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Digiode

USA . 893 parts In-Stock

1+ parts

$0.291

100+ parts

-

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893

$0.291

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Vyrian

USA . 1,071 parts In-Stock

1+ parts

$0.306

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1,071

$0.306

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DigiKey Marketplace

USA . 72,980 parts In-Stock

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72,980

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Chip Stock

USA . 34,000 parts In-Stock

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34,000

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Flip Electronics

USA . 11,767 parts In-Stock

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11,767

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 960 parts In-Stock

1+ parts

$0.171

100+ parts

-

1k+ parts

-

10k+ parts

$0.165

960

$0.171

-

-

$0.165

Northwest PG Solutions

USA . 1,623 parts In-Stock

1+ parts

$0.189

100+ parts

-

1k+ parts

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10k+ parts

$0.166

1,623

$0.189

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$0.166

Corphita

USA . 316 parts In-Stock

1+ parts

$0.275

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316

$0.275

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Corohmni

South Africa . 155 parts In-Stock

1+ parts

$0.300

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155

$0.300

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Microchip USA

USA . 2,708 parts In-Stock

1+ parts

$5.135

100+ parts

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2,708

$5.135

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QUARKTWIN TECHNOLOGY LTD

USA . 24,514 parts In-Stock

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SupplyDigital Components

Austria . 6,160 parts In-Stock

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TANS Electronics

Latvia . 5,171 parts In-Stock

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5,171

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Kulean Microsystems

USA . 3,839 parts In-Stock

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3,839

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Problanco Electronics

Mexico . 2,964 parts In-Stock

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2,964

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Continental Prestige Electronics

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.282

10k+ parts

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2,500

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$0.282

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UHIMA Technologies

Türkiye . 393 parts In-Stock

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393

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Overview

Unleash the power of innovation with the 2SD1802T-E by Onsemi. Crafted with precision and quality, this NPN Bipolar Junction Transistor is a game-changer in the world of small signal electronics. With a maximum power dissipation of 15W and a minimum DC current gain of 200, this transistor offers unparalleled performance and reliability. Whether you're designing audio amplifiers, signal processing circuits, or motor control systems, the 2SD1802T-E is your go-to solution for efficiency and effectiveness. Elevate your projects to new heights with this cutting-edge component from Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile in various applications, making this product suitable for a wide range of uses.

Configuration: SINGLE

Single configuration transistors are easy to work with and integrate into circuits, making them ideal for simple designs and applications.

Maximum Power Dissipation (Abs): 15 W

The high maximum power dissipation rating of 15W allows this transistor to handle power efficiently, making it reliable in demanding applications.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures stable and consistent amplification performance, making this transistor a reliable choice for signal amplification.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, ensuring long-term reliability in various applications.

Maximum Collector Current (IC): 3 A

The high maximum collector current rating of 3A allows this transistor to handle high current loads, making it suitable for applications requiring significant power output.

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish provides good solderability and reliability, ensuring secure connections and longevity in use.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1802T-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Trade Compliance

2SD1802T-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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