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2N6027RLRA

Onsemi

2N6027RLRA by Onsemi

2N6027RLRA by Onsemi is a Programmable UJT with max on-state current of 0.15A and anode-cathode voltage of 40V. It has a min valley current of 70uA, making it ideal for triggering circuits in applications requiring precise control over switching characteristics. With a package style of cylindrical shape and through-hole terminals, it can operate b/w -50°C to 100°C efficiently.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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VNN

France . 3,136 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 149 parts In-Stock

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$15.100

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AZTECH Wire

Italy . 795 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

USA . 12,542 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

Latvia . 2,701 parts In-Stock

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Corphita

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Problanco Electronics

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UHIMA Technologies

Türkiye . 822 parts In-Stock

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Overview

Unlock the power of precision with the Onsemi 2N6027RLRA Programmable Unijunction Transistor. Crafted by a trusted manufacturer known for reliability and innovation, this single-configured device offers a versatile solution for a wide range of applications. From pulse generation to voltage-controlled oscillators, this UJT delivers superior performance with a maximum on-state current of 0.15 A and a maximum anode to cathode voltage of 40 V. Experience the value and benefits of this high-quality product, designed to meet your unique needs with ease and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product, making it a good choice for long-term use.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it user-friendly and efficient.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various designs, making it versatile for different applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure connection and stability, ensuring consistent performance in various conditions.

Maximum On-state Current: 0.15 A

The high maximum on-state current capacity enables the product to handle heavy loads, making it suitable for demanding applications.

Maximum Anode To Cathode Voltage: 40 V

The high maximum anode to cathode voltage allows the product to withstand high voltage levels, ensuring safety and reliability.

No. of Terminals: 3

The three terminals provide flexibility in connectivity and functionality, allowing for diverse circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and space-saving benefits, ideal for applications with limited space constraints.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature capability ensures reliable performance even in extreme temperature conditions.

Trigger Device Type: PROGRAMMABLE UJT

The programmable UJT trigger device type offers customizable triggering options, enhancing versatility and adaptability for different applications.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6027RLRA attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

2 uA

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Minimum Valley Current:

70 uA

Trade Compliance

2N6027RLRA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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