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2N6027G

Onsemi

2N6027G by Onsemi

The Onsemi 2N6027G is a Programmable UJT with max on-state current of 0.15A and anode-cathode voltage of 40V. It has a single configuration, suitable for triggering applications in circuits requiring precise timing control at temperatures ranging from -50 to 125°C.

Median Price

$0.139

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

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$0.139

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Chip Stock

USA . 72,500 parts In-Stock

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Vyrian

USA . 8,155 parts In-Stock

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Digiode

USA . 2,160 parts In-Stock

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VNN

France . 1,834 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 200 parts In-Stock

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Holdelec - ElecDif-Pro

France . 10 parts In-Stock

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Cogito LLC

Ukraine . 3 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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Cyclops Electronics Ltd

UK . 1 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 2,004 parts In-Stock

1+ parts

$0.139

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$0.135

2,004

$0.139

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$0.135

Netroflash

USA . 2,000 parts In-Stock

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$0.139

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$0.139

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Continental Prestige Electronics

USA . 1,273 parts In-Stock

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$0.139

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$0.136

1,273

$0.139

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$0.136

Semicontronic

India . 1,432 parts In-Stock

1+ parts

$3.100

100+ parts

$3.022

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$3.007

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1,432

$3.100

$3.022

$3.007

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Aztec Data Supply Inc.

USA . 3,195 parts In-Stock

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$3.259

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$3.259

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Corohmni

South Africa . 195 parts In-Stock

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$3.928

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$3.928

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$4.073

100+ parts

$3.706

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$3.340

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350

$4.073

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$3.340

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AZTECH Wire

Italy . 522 parts In-Stock

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$8.686

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522

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Ampacity Inc.

Singapore . 164 parts In-Stock

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$25.100

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$25.100

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Component Stockers USA

USA . 277 parts In-Stock

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$99.990

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Perfect Parts

USA . 49,953 parts In-Stock

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Problanco Electronics

Mexico . 6,924 parts In-Stock

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Lixinc

USA . 5,428 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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TANS Electronics

Latvia . 2,019 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Corphita

USA . 1,798 parts In-Stock

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SupplyDigital Components

Austria . 1,784 parts In-Stock

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S.R.D Solutions

India . 1,720 parts In-Stock

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

Türkiye . 934 parts In-Stock

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934

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Kulean Microsystems

USA . 527 parts In-Stock

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527

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Overview

Enhance your electronic projects with the 2N6027G by Onsemi, a high-quality Programmable Unijunction Transistor (UJT) designed to provide reliable performance and precision. Manufactured by Onsemi, a trusted name in the industry, this product offers customers unmatched value and benefits. From controlling timing circuits to triggering thyristors, the 2N6027G is versatile and efficient for a wide range of applications. Trust Onsemi to deliver excellence in every component, and experience the superior quality and performance that sets this UJT apart from the rest. Upgrade your projects today with the 2N6027G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for a variety of environments.

Maximum On-state Current: 0.15 A

Capable of handling higher currents, increasing the functionality and performance of the product.

Maximum Anode To Cathode Voltage: 40 V

Allows for high voltage tolerance, making the product reliable in high voltage applications.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, increasing the product's versatility.

Minimum Operating Temperature: -50 °C

Capable of functioning in extreme low temperatures, making it suitable for a wide range of operating conditions.

Maximum Power Dissipation: 0.3 W

Efficient power dissipation capability, ensuring the product remains stable and reliable during operation.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6027G attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

2 uA

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Minimum Valley Current:

70 uA

Trade Compliance

2N6027G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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