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2N6027RLRAG

Onsemi

2N6027RLRAG by Onsemi

2N6027RLRAG by Onsemi is a Programmable UJT with max on-state current of 0.15A, anode-cathode voltage of 40V, and min valley current of 70uA. It is used in trigger devices, operating b/w -50 to 125°C, with a power dissipation of 0.3W for applications requiring single configuration UJTs.

Median Price

$0.189

Lifecycle Status

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7

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1k+

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Nova Conductors

Japan . 50 parts In-Stock

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Bristol Electronics

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Digiode

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Semi Source

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Argo Parts USA

USA . 3,062 parts In-Stock

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$0.118

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$0.114

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Continental Prestige Electronics

USA . 1,943 parts In-Stock

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$0.118

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.122

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$0.115

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Corohmni

South Africa . 365 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,671 parts In-Stock

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Semicontronic

India . 710 parts In-Stock

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AZTECH Wire

Italy . 244 parts In-Stock

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$19.659

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Ampacity Inc.

Singapore . 814 parts In-Stock

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Perfect Parts

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Lixinc

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Authorized Procurement Solutions

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Problanco Electronics

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TANS Electronics

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Metaverse IC Inc.

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Corphita

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Kulean Microsystems

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Formix International (Excess)

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Glotronic Ltd.

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CPlus Electronics

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Overview

Unlock endless possibilities with the Onsemi 2N6027RLRAG Programmable Unijunction Transistor. Manufactured by industry leader Onsemi, this high-quality component offers reliable performance and versatility for a wide range of applications. Whether you are designing precision timing circuits or pulse generators, this programmable UJT delivers exceptional value, efficiency, and durability. Trust Onsemi to provide innovative solutions that meet your needs and exceed your expectations. Choose the 2N6027RLRAG for unbeatable quality and performance in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and resistant to environmental factors, ensuring a longer lifespan.

Maximum On-state Current: 0.15 A

The high maximum on-state current allows for efficient and powerful operation of the programmable UJT.

Maximum Anode To Cathode Voltage: 40 V

With a high maximum anode to cathode voltage, this programmable UJT can handle a wide range of voltage levels, making it versatile for different applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even in high-temperature environments.

Trigger Device Type: PROGRAMMABLE UJT

Being a programmable UJT, this device offers flexibility in designing and adjusting triggering parameters for specific applications.

Minimum Valley Current: 70 uA

The low minimum valley current allows for precision triggering and control of the UJT, making it suitable for sensitive applications.

Maximum Power Dissipation: 0.3 W

The low maximum power dissipation ensures efficient energy usage and prevents overheating of the component.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6027RLRAG attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

2 uA

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trigger Device Type:

Minimum Valley Current:

70 uA

Trade Compliance

2N6027RLRAG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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