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2N6027RL1G

Onsemi

2N6027RL1G by Onsemi

2N6027RL1G by Onsemi is a Programmable UJT with max on-state current of 0.15A, anode-cathode voltage of 40V, and min valley current of 70uA. Ideal for triggering circuits in applications like pulse generators and thyristor firing.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$0.250

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VNN

France . 31,218 parts In-Stock

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Vyrian

USA . 2,675 parts In-Stock

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Digiode

USA . 51 parts In-Stock

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Advanced Electronics

New Zealand . 650 parts In-Stock

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$3.592

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$3.412

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$3.412

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650

$3.592

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$3.412

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Aztec Data Supply Inc.

USA . 338 parts In-Stock

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$4.741

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338

$4.741

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AZTECH Wire

Italy . 232 parts In-Stock

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$14.606

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Semicontronic

India . 753 parts In-Stock

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$21.100

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$20.572

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$20.467

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753

$21.100

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$20.467

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Ampacity Inc.

Singapore . 939 parts In-Stock

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$22.100

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Perfect Parts

USA . 7,572 parts In-Stock

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Argo Parts USA

USA . 4,910 parts In-Stock

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Lixinc

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Continental Prestige Electronics

USA . 3,931 parts In-Stock

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TANS Electronics

Latvia . 3,770 parts In-Stock

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SupplyDigital Components

Austria . 3,299 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kulean Microsystems

USA . 1,818 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 627 parts In-Stock

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Corohmni

South Africa . 463 parts In-Stock

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UHIMA Technologies

Türkiye . 46 parts In-Stock

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Overview

Unleash the power of innovation with the 2N6027RL1G Programmable Unijunction Transistor from Onsemi. This cutting-edge component offers unrivaled quality and reliability, backed by Onsemi's stellar reputation in the industry. Ideal for a wide range of applications, this UJT transistor brings superior performance and efficiency to your projects. Experience the value and benefits of using the 2N6027RL1G, where precision meets perfection for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the programmable UJT, ensuring a longer lifespan.

Maximum On-state Current: 0.15 A

The high maximum on-state current allows for efficient performance and reliable operation of the programmable UJT in various applications.

Maximum Anode To Cathode Voltage: 40 V

The high maximum anode to cathode voltage tolerance makes the programmable UJT suitable for use in circuits with higher voltage requirements.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this programmable UJT can withstand harsh environmental conditions and operate effectively in elevated temperatures.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature allows the programmable UJT to function reliably even in cold environments, making it versatile for various applications.

Maximum Power Dissipation: 0.3 W

The low power dissipation of the programmable UJT helps in reducing energy consumption and minimizing heat generation during operation.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6027RL1G attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

2 uA

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Minimum Valley Current:

70 uA

Trade Compliance

2N6027RL1G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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