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A5T6117

Texas Instruments

A5T6117 by Texas Instruments

A5T6117 by Texas Instruments is a Programmable UJT with max on-state current of 0.2A and anode-cathode voltage of 40V. It operates b/w -65°C to 150°C, making it suitable for temperature-sensitive applications. With a package style of cylindrical, it is ideal for circuits requiring a single wire terminal configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,393 parts In-Stock

1+ parts

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8,393

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Digiode

USA . 3,351 parts In-Stock

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3,351

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,189 parts In-Stock

1+ parts

$1.100

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1,189

$1.100

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Semicontronic

India . 1,286 parts In-Stock

1+ parts

$3.100

100+ parts

$3.022

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$3.007

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1,286

$3.100

$3.022

$3.007

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Parana Technologies

USA . 2,165 parts In-Stock

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$4.255

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$4.687

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2,165

$4.255

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$4.687

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DigiPath Technology Company

USA . 1,566 parts In-Stock

1+ parts

$4.685

100+ parts

$4.311

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1,566

$4.685

$4.311

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ChromeModa Solutions

Germany . 712 parts In-Stock

1+ parts

$4.781

100+ parts

$3.920

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712

$4.781

$3.920

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IDEA Electronic Components Group

UK . 24 parts In-Stock

1+ parts

$4.781

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$4.303

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24

$4.781

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$4.303

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AZTECH Wire

Italy . 371 parts In-Stock

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$5.736

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371

$5.736

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One Stop Electronics

USA . 740 parts In-Stock

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$11.100

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740

$11.100

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Northwest PG Solutions

USA . 1,461 parts In-Stock

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Native Components

USA . 370 parts In-Stock

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370

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Corohmni

South Africa . 348 parts In-Stock

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348

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Corphita

USA . 231 parts In-Stock

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Overview

Unlock endless possibilities with the A5T6117 by Texas Instruments. Crafted with precision and expertise, this Programmable Unijunction Transistor (UJT) is designed to deliver unparalleled performance in a variety of applications. From pulse generation to oscillation circuits, this product offers reliability, efficiency, and accuracy like no other. Discover the value and benefits that this innovative technology brings to your projects - trust Texas Instruments for quality you can rely on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, ensuring the product is robust and portable.

Maximum On-state Current: 0.2 A

Capable of handling a maximum on-state current of 0.2 A, making it suitable for a variety of applications that require moderate current handling.

Maximum Anode To Cathode Voltage: 40 V

Can withstand a maximum anode to cathode voltage of 40 V, providing a safe operating range for the device.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can operate reliably in high-temperature environments.

Minimum Operating Temperature: -65 °C

Capable of operating in very low temperatures down to -65°C, making it suitable for a wide range of operating conditions.

Maximum Power Dissipation: 0.3 W

Efficient power dissipation of up to 0.3 W, ensuring minimal heat buildup during operation.

Technical Specifications

Programmable Unijunction Transistors (UJT) A5T6117 attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Texas Instruments

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.2 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

.3 uA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Minimum Valley Current:

50 uA

Trade Compliance

A5T6117 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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