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A7T6027

Texas Instruments

A7T6027 by Texas Instruments

A7T6027 by Texas Instruments is a Programmable UJT with 3 terminals and max anode-cathode voltage of 40V. It has a min valley current of 70uA, max power dissipation of 0.3W, and trigger device type as Programmable UJT. Ideal for applications requiring precise triggering in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,692 parts In-Stock

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7,692

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Digiode

USA . 1,694 parts In-Stock

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1,694

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 180 parts In-Stock

1+ parts

$0.428

100+ parts

-

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$0.411

180

$0.428

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$0.411

Northwest PG Solutions

USA . 1,832 parts In-Stock

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$0.471

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-

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$0.415

1,832

$0.471

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$0.415

Ampacity Inc.

Singapore . 1,146 parts In-Stock

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$1.100

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$1.100

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Parana Technologies

USA . 1,534 parts In-Stock

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$2.890

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$3.383

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1,534

$2.890

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$3.383

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ChromeModa Solutions

Germany . 4,101 parts In-Stock

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$3.247

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$2.663

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4,101

$3.247

$2.663

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IDEA Electronic Components Group

UK . 2,074 parts In-Stock

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$3.247

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$2.922

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2,074

$3.247

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$2.922

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One Stop Electronics

USA . 548 parts In-Stock

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$9.100

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548

$9.100

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AZTECH Wire

Italy . 644 parts In-Stock

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$10.873

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644

$10.873

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Semicontronic

India . 674 parts In-Stock

1+ parts

$11.100

100+ parts

$10.822

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$10.767

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674

$11.100

$10.822

$10.767

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Corphita

USA . 4,566 parts In-Stock

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DigiPath Technology Company

USA . 748 parts In-Stock

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$2.927

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748

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$2.927

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Corohmni

South Africa . 495 parts In-Stock

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495

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Overview

Unlock the power of precision and reliability with the A7T6027 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality Programmable Unijunction Transistors (UJT) that cater to a wide range of applications. The A7T6027 stands out for its superior performance, maximum anode to cathode voltage of 40V, and impressive power dissipation of 0.3W. With its single configuration and wire terminal form, this product offers unmatched value and benefits to customers looking for a reliable solution for their electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Configuration: SINGLE

Simplified design and operation for ease of use and integration into circuits.

Maximum Anode To Cathode Voltage: 40 V

Allows for the handling of higher voltages, making it suitable for a wide range of applications.

No. of Terminals: 3

Simple interface with external circuits, making it versatile for different uses.

Minimum Valley Current: 70 uA

A low minimum valley current allows for precision triggering and control in circuits.

Maximum Power Dissipation: 0.3 W

Efficient power handling capabilities, reducing the risk of overheating and improving overall performance.

Maximum Peak Current: 2 uA

Capable of handling short bursts of high current, making it ideal for pulse triggering applications.

Technical Specifications

Programmable Unijunction Transistors (UJT) A7T6027 attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Texas Instruments

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

2 uA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Minimum Valley Current:

70 uA

Trade Compliance

A7T6027 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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