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2N6028RLRM

Onsemi

2N6028RLRM by Onsemi

2N6028RLRM by Onsemi is a Programmable UJT with max on-state current of 0.15A and anode-cathode voltage of 40V. It has a single configuration, operates b/w -50 to 100 °C, and is used in trigger devices for applications requiring precise timing control.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Digiode

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A2Z Electronics, Inc.

USA . 615 parts In-Stock

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Bristol Electronics

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Vyrian

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SupplyDigital Components

Austria . 4,572 parts In-Stock

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Kulean Microsystems

USA . 3,066 parts In-Stock

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TANS Electronics

Latvia . 2,782 parts In-Stock

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Problanco Electronics

Mexico . 2,057 parts In-Stock

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Northwest PG Solutions

USA . 1,733 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 438 parts In-Stock

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Corohmni

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Native Components

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Overview

Discover the power and precision of the 2N6028RLRM Programmable Unijunction Transistor by Onsemi. With a trusted manufacturer like Onsemi, you can count on top-quality components for your electronics projects. This UJT is perfect for applications requiring precise triggering and control. Experience seamless performance and reliability with this single configuration transistor. Upgrade your devices today with the 2N6028RLRM and unlock endless possibilities in electronics design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the programmable UJT, making it long-lasting and reliable.

Maximum On-state Current: 0.15 A

The high maximum on-state current allows for efficient operation and handling of electrical currents, making it suitable for a variety of applications.

Maximum Anode To Cathode Voltage: 40 V

The high maximum voltage capacity ensures that the programmable UJT can handle high voltage inputs without compromising its performance or safety.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this programmable UJT can withstand and operate in harsh environmental conditions, increasing its versatility and reliability.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature allows the programmable UJT to function effectively even in cold environments, enhancing its usability in various settings.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides excellent conductivity and solderability, ensuring secure connections and efficient performance of the programmable UJT.

Maximum Power Dissipation: 0.3 W

The low maximum power dissipation helps prevent overheating and ensures the efficient operation of the programmable UJT, contributing to its longevity and reliability.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6028RLRM attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

.15 uA

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Minimum Valley Current:

25 uA

Trade Compliance

2N6028RLRM Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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