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2N6028G

Onsemi

2N6028G by Onsemi

2N6028G by Onsemi is a Programmable UJT with max on-state current of 0.15A and anode-cathode voltage of 40V. It has a single configuration, operates b/w -50 to 125 °C, and is ideal for triggering applications in electronics circuits.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 7,072 parts In-Stock

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Chip Stock

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Digiode

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Sunrise Surplus Inc.

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Aztec Data Supply Inc.

USA . 40 parts In-Stock

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$3.300

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40

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AZTECH Wire

Italy . 205 parts In-Stock

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$9.290

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Component Stockers USA

USA . 582 parts In-Stock

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$99.990

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Perfect Parts

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SupplyDigital Components

Austria . 8,375 parts In-Stock

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Microchip USA

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Computer Components Inc. - USA

USA . 3,750 parts In-Stock

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TANS Electronics

Latvia . 3,707 parts In-Stock

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Problanco Electronics

Mexico . 3,706 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Assy Fe

Spain . 2,179 parts In-Stock

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Futuretech Components

Singapore . 2,000 parts In-Stock

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Kulean Microsystems

USA . 1,850 parts In-Stock

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Northwest PG Solutions

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Native Components

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 804 parts In-Stock

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UHIMA Technologies

Türkiye . 655 parts In-Stock

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Corphita

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Corohmni

South Africa . 190 parts In-Stock

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Overview

Unlock the power of precision with the 2N6028G by Onsemi. Crafted with the utmost quality and expertise, this Programmable Unijunction Transistor (UJT) offers unparalleled performance and reliability. From lighting control systems to phase-locked loops, this versatile component is ideal for a wide range of applications. Experience enhanced efficiency and seamless operation with the innovative design and advanced features of the 2N6028G. Elevate your projects to new heights with this exceptional product from a trusted industry leader.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the UJT, ensuring longevity and reliable performance.

Maximum On-state Current: 0.15 A

Capable of handling a higher current, making it suitable for applications that require a higher load capacity.

Maximum Anode To Cathode Voltage: 40 V

Provides a high voltage tolerance, allowing the UJT to be used in a variety of electrical circuits without risk of damage.

No. of Terminals: 3

Simple and easy to integrate into circuits with limited terminal connections, making it versatile and user-friendly.

Maximum Operating Temperature: 125 °C

Can operate efficiently in high temperature environments, ensuring stability and reliability under harsh conditions.

Minimum Operating Temperature: -50 °C

Capable of functioning in low temperature environments, making it suitable for a wide range of applications.

Maximum Power Dissipation: 0.3 W

Efficiently dissipates heat generated during operation, preventing overheating and ensuring optimal performance.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6028G attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Onsemi

Specs

Maximum Anode To Cathode Voltage:

40 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.15 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

.15 uA

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Sub-Category:

Programmable Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Minimum Valley Current:

25 uA

Trade Compliance

2N6028G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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