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2N6116

Texas Instruments

2N6116 by Texas Instruments

2N6116 by Texas Instruments is a Programmable UJT with 3 terminals, max anode-cathode voltage of 40V, and min valley current of 70uA. It has a single configuration in a round metal package suitable for trigger applications like oscillators and pulse generators.

Median Price

$9.850

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 7,106 parts In-Stock

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$9.850

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Vyrian

USA . 9,624 parts In-Stock

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PUI

USA . 3,032 parts In-Stock

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3,032

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Digiode

USA . 2,797 parts In-Stock

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ES Components

USA . 166 parts In-Stock

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166

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Sunrise Surplus Inc.

USA . 133 parts In-Stock

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ECAB

Sweden . 3 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 3 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 950 parts In-Stock

1+ parts

$2.652

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$3.142

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950

$2.652

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$3.142

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ChromeModa Solutions

Germany . 3,193 parts In-Stock

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$2.980

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$2.444

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3,193

$2.980

$2.444

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IDEA Electronic Components Group

UK . 1,332 parts In-Stock

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$2.980

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$2.682

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$2.682

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AZTECH Wire

Italy . 469 parts In-Stock

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$14.087

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469

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One Stop Electronics

USA . 936 parts In-Stock

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$21.100

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936

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Corphita

USA . 4,706 parts In-Stock

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DigiPath Technology Company

USA . 1,065 parts In-Stock

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$2.687

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Northwest PG Solutions

USA . 1,002 parts In-Stock

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Native Components

USA . 635 parts In-Stock

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Assy Fe

Spain . 6 parts In-Stock

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Overview

Looking for a reliable and high-quality programmable unijunction transistor? Look no further than the 2N6116 by Texas Instruments. With a reputation for excellence, Texas Instruments delivers top-notch products that meet the highest standards in the industry. The 2N6116 is perfect for a variety of applications in electronics, telecommunications, and more. Offering exceptional value and performance, this versatile transistor provides customers with the quality they need at a price they'll love. Upgrade your projects today with the 2N6116 from Texas Instruments.

Feature Benefit Bullets

Package Body Material: METAL

Metal package offers good heat dissipation, making the product more reliable and durable.

Configuration: SINGLE

Single configuration simplifies the design and makes it easier to integrate into circuits.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various applications.

Terminal Form: WIRE

Wire terminals provide a secure connection and easy soldering for a reliable electrical connection.

Maximum Anode To Cathode Voltage: 40 V

High maximum voltage allows for versatile use in different circuits and applications.

No. of Terminals: 3

Three terminals offer flexibility in circuit design and connection options.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact, saving space and facilitating easy integration into circuits.

Trigger Device Type: PROGRAMMABLE UJT

Programming capabilities provide customization and flexibility in circuit operations.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB layout and connection.

Minimum Valley Current: 70 uA

Low minimum valley current allows for efficient operation and energy savings.

Case Connection: ANODE

Anode case connection simplifies circuit connection and design.

Maximum Peak Current: 2 uA

Low maximum peak current ensures safe operation and protects the device from damage.

Technical Specifications

Programmable Unijunction Transistors (UJT) 2N6116 attributes and parameters. Explore more Programmable Unijunction Transistors (UJT) devices from Texas Instruments

Specs

Maximum Anode To Cathode Voltage:

40 V

Case Connection:

Configuration:

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Maximum Peak Current:

2 uA

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Minimum Valley Current:

70 uA

Trade Compliance

2N6116 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-353-2257, 5961003532257

NIIN

003532257

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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